Abstract: An etching method for detecting crystal defects, the method includes providing a substrate with an etchant containing hydrogen fluoride, nitric acid, hydrogen chloride, and water. A concave portion on a part having a crystal defect of the substrate is formed by the etchant. The concave portion is examined by a microscope to locate a position of the crystal defect.

Abstract: An etching method for detecting crystal defects, the method includes providing a substrate with an etchant containing hydrogen fluoride, nitric acid, hydrogen chloride, and water. A concave portion on a part having a crystal defect of the substrate is formed by the etchant. The concave portion is examined by a microscope to locate a position of the crystal defect.

Abstract: In a silicon substrate, impurity diffusion layers, serving as source and drain regions, are formed to be separated from each other. A gate insulation film is formed on the silicon substrate between these source and drain regions. The gate insulation film is a silicon oxide film containing Cl having concentration of more than 1.times.10.sup.18 atoms/cm.sup.3 and less than 2.times.10.sup.20 atoms/cm.sup.3, and the gate insulation film is formed on the silicon substrate by low-pressure CVD. A gate electrode, formed of a polysilicon layer, is formed on the gate insulation film. An inter-level insulation film is formed on a resultant structure. A contact hole is formed on each of the source and drain regions of the inter-level insulation film. A drain electrode is formed on the inter-level insulation film, and connected to the drain region through the contact hole. A source electrode is formed on the inter-level insulation film, and connected to the source region through the contact hole.

Abstract: In a silicon substrate, impurity diffusion layers, serving as source and drain regions, are formed to be separated from each other. A gate insulation film is formed on the silicon substrate between these source and drain regions. The gate insulation film is a silicon oxide film containing Cl having concentration of more than 1.times.10.sup.18 atoms/cm.sup.3 and less than 2.times.10.sup.20 atoms/cm.sup.3, and the gate insulation film is formed on the silicon substrate by low-pressure CVD. A gate electrode, formed of a polysilicon layer, is formed on the gate insulation film. An inter-level insulation film is formed on a resultant structure. A contact hole is formed on each of the source and drain regions of the inter-level insulation film. A drain electrode is formed on the inter-level insulation film, and connected to the drain region through the contact hole. A source electrode is formed on the inter-level insulation film, and connected to the source region through the contact hole.