Patents by Inventor Sakae Koubori

Sakae Koubori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230369010
    Abstract: Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.
    Type: Application
    Filed: February 27, 2023
    Publication date: November 16, 2023
    Inventors: Toru Iwaya, Hisayuki Takasu, Sakae Koubori
  • Patent number: 11621141
    Abstract: Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: April 4, 2023
    Assignee: Hitachi High-Tech Corporation
    Inventors: Toru Iwaya, Hisayuki Takasu, Sakae Koubori
  • Publication number: 20210193430
    Abstract: Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.
    Type: Application
    Filed: February 26, 2016
    Publication date: June 24, 2021
    Inventors: Toru IWAYA, Hisayuki TAKASU, Sakae KOUBORI
  • Patent number: 10269534
    Abstract: The present invention relates to adjustment of a mask position by driving an R-axis of an electron microscope in order to adjust the mask position with high accuracy while performing observation by the electron microscope without providing a heat generation source inside the electron microscope. The R-axis originally exists in a sample chamber of the electron microscope, which enables control with high accuracy. The R-axis driving of a sample stage can be substituted by raster rotation, therefore, the mask position can be adjusted with high accuracy while performing observation by the electron microscope according to the present invention.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: April 23, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Toru Iwaya, Hisayuki Takasu, Sakae Koubori, Atsushi Kamino, Kento Horinouchi
  • Publication number: 20180277335
    Abstract: The present invention relates to adjustment of a mask position by driving an R-axis of an electron microscope in order to adjust the mask position with high accuracy while performing observation by the electron microscope without providing a heat generation source inside the electron microscope. The R-axis originally exists in a sample chamber of the electron microscope, which enables control with high accuracy. The R-axis driving of a sample stage can be substituted by raster rotation, therefore, the mask position can be adjusted with high accuracy while performing observation by the electron microscope according to the present invention.
    Type: Application
    Filed: January 30, 2015
    Publication date: September 27, 2018
    Inventors: Toru IWAYA, Hisayuki TAKASU, Sakae KOUBORI, Atsushi KAMINO, Kento HORINOUCHI
  • Patent number: 6920703
    Abstract: The object of the present invention is to provide a microstructure drying treatment method by which a substrate having a microstructure has a fine pattern of less than 30 nm and a large-caliber substrate of 100 mm or more can be dried uniformly and in a short time without generating pattern collapse, and its apparatus and its high pressure vessel. The present invention is a microstructure drying treatment method of introducing a fluid that is gas at normal temperature and pressure and is liquid under high pressure inside a high pressure vessel in which a substrate having a microstructure in a state immersed in or wet with a rinsing liquid in a liquid or supercritical state. The method forms a specific gravity difference between the rinsing liquid and fluid inside the high pressure vessel and collects the rinsing liquid to the upper side or lower side of the high pressure vessel by changing at least one side of the temperature and pressure of the fluid and changing the specific gravity of the fluid.
    Type: Grant
    Filed: May 4, 2004
    Date of Patent: July 26, 2005
    Assignee: Hitachi Science Systems, Ltd.
    Inventors: Hisayuki Taktsu, Toru Iwaya, Koichi Miyazawa, Sakae Koubori
  • Publication number: 20050050757
    Abstract: The object of the present invention is to provide a microstructure drying treatment method by which a substrate having a microstructure has a fine pattern of less than 30 nm and a large-caliber substrate of 100 mm or more can be dried uniformly and in a short time without generating pattern collapse, and its apparatus and its high pressure vessel. The present invention is a microstructure drying treatment method of introducing a fluid that is gas at normal temperature and pressure and is liquid under high pressure inside a high pressure vessel in which a substrate having a microstructure in a state immersed in or wet with a rinsing liquid in a liquid or supercritical state. The method forms a specific gravity difference between the rinsing liquid and fluid inside the high pressure vessel and collects the rinsing liquid to the upper side or lower side of the high pressure vessel by changing at least one side of the temperature and pressure of the fluid and changing the specific gravity of the fluid.
    Type: Application
    Filed: May 4, 2004
    Publication date: March 10, 2005
    Inventors: Hisayuki Taktsu, Toru Iwaya, Koichi Miyazawa, Sakae Koubori