Abstract: A support base supports a plate-shaped workpiece. The support base includes a flat plate-shaped box member having a support face for supporting a workpiece and a placement face that is a face on the opposite side to the support face and is placed on a holding face of a chuck table, a temperature measurement unit accommodated in the box member, and a battery accommodated in the box member and serving as a power supply for the temperature measurement unit. The temperature measurement unit includes a temperature measuring instrument that measures a temperature at the support face, and a recording unit that records the temperature measured by the temperature measuring instrument.

Abstract: A method of forming an insulating layer on a first interconnect layer formed on a first surface of a wafer includes a step of coating an upper surface of the first interconnect layer and the upper surface of the wafer with a thermosetting resin, a step of modifying predetermined regions of the thermosetting resin into modified resin portions, a step of dissolving the modified resin portions modified in the modifying step with a chemical solution and thereafter removing the dissolved modified resin portions by supplying a cleaning fluid to the wafer, a step of accommodating the wafer into a hermetically sealable chamber, hermetically sealing the chamber, and making the chamber free of oxygen, and a step of heating the wafer accommodated in the chamber that has been made free of oxygen to thermoset the thermosetting resin.

Abstract: A method of manufacturing device chips includes the steps of placing a workpiece on a table with a sheet of an insulating material being interposed between the table and the workpiece, attracting the sheet to the workpiece under electrostatic forces by applying a voltage between electrodes in the table to polarize the workpiece and the sheet, unloading the workpiece with the sheet attracted thereto from the table, processing the workpiece with the sheet attracted thereto to divide the workpiece into a plurality of device chips that correspond respectively to devices, and peeling off the device chips from the sheet by bringing an electrically conductive probe into contact with one, at a time, of areas of the sheet that correspond respectively to the device chips and applying a voltage to the probe thereby to release the sheet from the device chips that have attracted the sheet.

Abstract: An electrostatic chuck table for holding a workpiece includes: a plate-shaped base transmittable with respect to a laser beam having a predetermined wavelength allowing the laser beam to be transmitted through the workpiece, the plate-shaped base having a first surface and a second surface opposite the first surface; an electrostatic attraction electrode assembly transmittable with respect to the laser beam having the predetermined wavelength, the electrostatic attraction electrode assembly being formed on the first surface of the base; and a resin layer transmittable with respect to the laser beam having the predetermined wavelength, the resin layer covering the electrode assembly and providing a holding surface for holding the workpiece thereon. The electrostatic chuck table is used in forming a modified layer within the workpiece held on the holding surface with the laser beam that is applied to the workpiece from the side of the second surface of the base.

Abstract: An electrostatic chuck table includes a plate-shaped base portion capable of transmitting a laser beam to be applied to a workpiece and an electrostatic attraction electrode portion capable of transmitting the laser beam. The laser beam has a transmission wavelength to the workpiece. The base portion has a first surface and a second surface opposite to the first surface. The electrode portion is formed on the first surface of the base portion. A method for using the electrostatic chuck table includes a workpiece holding step of applying a voltage to the electrode portion formed on the first surface to thereby electrostatically hold the workpiece on the second surface, and a modified layer forming step of applying the laser beam through the first surface to a predetermined position inside the workpiece held on the second surface to thereby form a modified layer inside the workpiece.

Abstract: A support base supports a plate-shaped workpiece. The support base includes a flat plate-shaped box member having a support face for supporting a workpiece and a placement face that is a face on the opposite side to the support face and is placed on a holding face of a chuck table, a temperature measurement unit accommodated in the box member, and a battery accommodated in the box member and serving as a power supply for the temperature measurement unit. The temperature measurement unit includes a temperature measuring instrument that measures a temperature at the support face, and a recording unit that records the temperature measured by the temperature measuring instrument.

Abstract: A method of manufacturing device chips includes the steps of placing a workpiece on a table with a sheet of an insulating material being interposed between the table and the workpiece, attracting the sheet to the workpiece under electrostatic forces by applying a voltage between electrodes in the table to polarize the workpiece and the sheet, unloading the workpiece with the sheet attracted thereto from the table, processing the workpiece with the sheet attracted thereto to divide the workpiece into a plurality of device chips that correspond respectively to devices, and peeling off the device chips from the sheet by bringing an electrically conductive probe into contact with one, at a time, of areas of the sheet that correspond respectively to the device chips and applying a voltage to the probe thereby to release the sheet from the device chips that have attracted the sheet.

Abstract: A method of manufacturing a small-diameter wafer from a wafer having one face and the other face, the one face being mirror-polished, is provided. The method includes a protective member covering step of covering the one face of the wafer with a first protective member and the other face of the wafer with a second protective member, a cut-out step of cutting out a plurality of small-diameter wafers from the wafer covered with the first protective member and the second protective member, a chamfering step of chamfering an outer periphery portion of each of the plurality of small-diameter wafers, and a protective member removing step of removing the first protective member and the second protective member from each of the plurality of small-diameter wafers.

Abstract: An electrostatic chuck table includes a plate-shaped base portion capable of transmitting a laser beam to be applied to a workpiece and an electrostatic attraction electrode portion capable of transmitting the laser beam. The laser beam has a transmission wavelength to the workpiece. The base portion has a first surface and a second surface opposite to the first surface. The electrode portion is formed on the first surface of the base portion. A method for using the electrostatic chuck table includes a workpiece holding step of applying a voltage to the electrode portion formed on the first surface to thereby electrostatically hold the workpiece on the second surface, and a modified layer forming step of applying the laser beam through the first surface to a predetermined position inside the workpiece held on the second surface to thereby form a modified layer inside the workpiece.

Abstract: An electrostatic chuck table for holding a workpiece includes: a plate-shaped base transmittable with respect to a laser beam having a predetermined wavelength allowing the laser beam to be transmitted through the workpiece, the plate-shaped base having a first surface and a second surface opposite the first surface; an electrostatic attraction electrode assembly transmittable with respect to the laser beam having the predetermined wavelength, the electrostatic attraction electrode assembly being formed on the first surface of the base; and a resin layer transmittable with respect to the laser beam having the predetermined wavelength, the resin layer covering the electrode assembly and providing a holding surface for holding the workpiece thereon. The electrostatic chuck table is used in forming a modified layer within the workpiece held on the holding surface with the laser beam that is applied to the workpiece from the side of the second surface of the base.

Abstract: A wafer processing method divides a wafer into individual devices along crossing streets formed on the front side of the wafer. The wafer has a substrate and a functional layer formed on the front side of the substrate. The individual devices are formed from the functional layer and are partitioned by the streets. A laser beam is applied along the streets from the front side of the functional layer to thereby remove the functional layer along the streets. A resist film is formed on the front side of the functional layer except on each street. The substrate of the wafer is plasma-etched along each street where the functional layer is absent to the depth corresponding to the finished thickness of each device, thereby forming a division groove along each street and also etching off a modified layer formed on the opposite sides of each street.

Abstract: A wafer processing method including a mask forming step of forming a mask for covering a region corresponding to each device on a functional layer formed on the front side of a substrate constituting a wafer, a groove forming step of spraying a fluid containing abrasive grains against the front side of the wafer to thereby form a groove for dividing the functional layer along each street, and an etching step of performing dry etching from the front side of the wafer to thereby form an etched groove along each street. Accordingly, it is possible to prevent that the functional layer may be separated to cause damage to each device. Furthermore, a wide area of the wafer can be processed at a time, so that the productivity can be improved.

Abstract: A touch sensor system includes buses, a plurality of touch sensor devices disposed on the buses, and an information integrating device that is connected to all the buses and integrates information from the touch sensor device. The touch sensor device includes a sensor unit and a signal processing unit that transmits a sensor data signal generated by processing an analog sensor signal to the information integrating device through the bus. The signal processing unit includes a digital converting unit, a threshold evaluating unit that gives a start permission of the signal process when a sensor value exceeds a preset threshold, an ID adding unit that adds a transmitter identification number to the sensor signal, and a data transmitting unit that outputs the sensor data signal to a signal line of the bus. Fast responses are made possible without increasing the amount of data and host processing load while including many touch sensor elements.

Abstract: A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

Abstract: A wafer processing method including a mask forming step of forming a mask for covering a region corresponding to each device on a functional layer formed on the front side of a substrate constituting a wafer, a groove forming step of spraying a fluid containing abrasive grains against the front side of the wafer to thereby form a groove for dividing the functional layer along each street, and an etching step of performing dry etching from the front side of the wafer to thereby form an etched groove along each street. Accordingly, it is possible to prevent that the functional layer may be separated to cause damage to each device. Furthermore, a wide area of the wafer can be processed at a time, so that the productivity can be improved.

Abstract: A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

Abstract: Provided is a technique for packaging a sensor structure having a contact sensing surface and a signal processing LSI that processes a sensor signal. The sensor structure has the contact sensing surface and sensor electrodes. The signal processing integrated circuit is embedded in a semiconductor substrate. The sensor structure and the semiconductor substrate are bonded by a bonding layer, forming a sensor device as a single chip. The sensor electrodes and the integrated circuit are sealed inside the sensor device, and the sensor electrodes and external terminals of the integrated circuit are led out to the back surface of the semiconductor substrate through a side surface of the semiconductor substrate.

Abstract: By forming a metal layer 14 on at least one of a connecting electrode 12 of a first substrate 10 and a connecting electrode 17 of a second substrate 15, placing the first substrate 10 and the second substrate 15 together in order that the connecting electrode 12 and the connecting electrode 17 face opposite to each other via the metal layer 14, increasing temperature up to anodic bonding temperature, and applying DC voltage between the first substrate 10 and the second substrate 15 while maintaining that temperature, the first substrate 10 and the second substrate 15 are anodically bonded, and at the same time by melting the metal layer 14, the connecting electrode 12 and the connecting electrode 17 are electrically connected. The method achieves anodic bonding of substrates with high yield and at the same time establishes wiring connection, effective for packaging.

Abstract: A vacuum processing apparatus for processing a workpiece under vacuum. The vacuum processing apparatus includes a housing having a first vacuum chamber for processing the workpiece and a second vacuum chamber partitioned from the first vacuum chamber by a partition wall and communicating with the first vacuum chamber through a communication opening formed in the partition wall, a shutter for closing the communication opening of the partition wall, a gate for closing a workpiece load/unload opening communicating with the second vacuum chamber, a workpiece holding unit provided in the first vacuum chamber for holding the workpiece, a processing unit for processing the workpiece held by the workpiece holding unit, a first evacuating unit for evacuating the first vacuum chamber, and a second evacuating unit for evacuating the second vacuum chamber.

Abstract: A wafer processing method divides a wafer into individual devices along crossing streets formed on the front side of the wafer. The wafer has a substrate and a functional layer formed on the front side of the substrate. The individual devices are formed from the functional layer and are partitioned by the streets. A laser beam is applied along the streets from the front side of the functional layer to thereby remove the functional layer along the streets. A resist film is formed on the front side of the functional layer except on each street. The substrate of the wafer is plasma-etched along each street where the functional layer is absent to the depth corresponding to the finished thickness of each device, thereby forming a division groove along each street and also etching off a modified layer formed on the opposite sides of each street.