Abstract: A display device includes a driving transistor and an organic EL element. The driving transistor includes an oxide semiconductor layer; a first gate electrode that region overlapping the oxide semiconductor layer; a first insulting layer between the first gate electrode and the oxide semiconductor layer; a second gate electrode that includes a region overlapping the oxide semiconductor layer and the first gate electrode; a second insulating layer between the second gate electrode and the oxide semiconductor layer; and a first and a second transparent conductive layer that are provided between the oxide semiconductor layer and the first insulating layer and each include a region contacting the oxide semiconductor layer. The organic EL element includes a first electrode; a second electrode; a light emitting layer between the first electrode and the second electrode; and an electron transfer layer between the light emitting layer and the first electrode.

Abstract: A display device includes a driving transistor and an organic EL element. The driving transistor includes an oxide semiconductor layer; a first gate electrode that includes a region overlapping the oxide semiconductor layer; a first insulating layer between the first gate electrode and the oxide semiconductor layer; a second gate electrode that includes a region overlapping the oxide semiconductor layer and the first gate electrode; a second insulating layer between the second gate electrode and the oxide semiconductor layer; and a first and a second transparent conductive layer that are provided between the oxide semiconductor layer and the first insulating layer and each include a region contacting the oxide semiconductor layer. The organic EL element includes a first electrode; a second electrode; a light emitting layer between the first electrode and the second electrode; and an electron transfer layer between the light emitting layer and the first electrode.

Abstract: A liquid crystal display is provided. The liquid crystal display includes a first substrate, a second substrate facing the first substrate and a liquid crystal layer interposed between the first and second substrates. The first substrate includes a first base substrate, a bump protruded from the first base substrate and an electrode having a shield electrode part and a common electrode part. The shield electrode part covers the bump. The second substrate includes a second base substrate and a spacer protruded toward the bump of the first substrate. A combined structure of the spacer and the bump supports the first and second substrates.

Abstract: A liquid crystal display includes: a substrate; a gate line and a data line on the substrate, and insulated from and crossing each other; a thin film transistor connected to the gate line and the data line; an interlayer insulating layer on the thin film transistor; a coating member on the interlayer insulating layer, the coating member elongated to overlap the data line; a common electrode on the interlayer insulating layer, the common electrode overlapping the coating member; a planarization layer covering the common electrode; and a pixel electrode on the planarization layer.

Abstract: A liquid crystal display includes a substrate, a gate line disposed on the substrate and including a bottom gate electrode, a first insulating layer covering the gate line, an active member including a channel which is disposed on the first insulating layer and overlaps the bottom gate electrode and a source electrode and a drain electrode at both end sides of the channel, a pixel electrode on the same layer as the active member, a second insulating layer covering the active member and the pixel electrode, a data line on the second insulating layer and connected to the active member, a passivation layer covering the data line, where the active member and the pixel electrode include an oxide semiconductor and the first insulating layer is a silicon nitride layer which includes a fluorine atom in the range of about 10 atm % to about 35 atm %.

Abstract: A liquid crystal display includes: a substrate; a gate line and a data line on the substrate, and insulated from and crossing each other; a thin film transistor connected to the gate line and the data line; an interlayer insulating layer on the thin film transistor; a coating member on the interlayer insulating layer, the coating member elongated to overlap the data line; a common electrode on the interlayer insulating layer, the common electrode overlapping the coating member; a planarization layer covering the common electrode; and a pixel electrode on the planarization layer.

Abstract: A liquid crystal display includes a substrate, a gate line disposed on the substrate and including a bottom gate electrode, a first insulating layer covering the gate line, an active member including a channel which is disposed on the first insulating layer and overlaps the bottom gate electrode and a source electrode and a drain electrode at both end sides of the channel, a pixel electrode on the same layer as the active member, a second insulating layer covering the active member and the pixel electrode, a data line on the second insulating layer and connected to the active member, a passivation layer covering the data line, where the active member and the pixel electrode include an oxide semiconductor and the first insulating layer is a silicon nitride layer which includes a fluorine atom in the range of about 10 atm % to about 35 atm %.

Abstract: A liquid crystal display is provided. The liquid crystal display includes a first substrate, a second substrate facing the first substrate and a liquid crystal layer interposed between the first and second substrates. The first substrate includes a first base substrate, a bump protruded from the first base substrate and an electrode having a shield electrode part and a common electrode part. The shield electrode part covers the bump. The second substrate includes a second base substrate and a spacer protruded toward the bump of the first substrate. A combined structure of the spacer and the bump supports the first and second substrates.

Abstract: A manufacturing method of a liquid crystal display panel includes applying a first electric field to a first area of a liquid crystal layer and irradiating a light to the first area to form first and second cured layers, which pre-tilt the first liquid crystal molecules at a first angle, applying a second electric field having an intensity different from the first electric field to the second area and irradiating the light to the second area to form third and fourth cured layers, which pre-tilt the second liquid crystal molecules at a second angle different from the first angle.

Abstract: An electrophoretic display device includes a first substrate, a second substrate facing the first substrate, and a barrier electrode disposed between the first and second substrates to define a pixel. An electrophoretic material is placed in the pixel. The pixel includes a first pixel electrode and a second pixel electrode disposed on and insulated from the first pixel electrode. The electrophoretic material moves according to an electric field generated between the barrier electrode and the first pixel electrode and between the barrier electrode and the second pixel electrode, so that a plurality of gray scales is displayed through the pixel.

Abstract: An electrophoretic display device includes a first substrate, a second substrate facing the first substrate, and a barrier electrode disposed between the first and second substrates to define a pixel. An electrophoretic material is placed in the pixel. The pixel includes a first pixel electrode and a second pixel electrode disposed on and insulated from the first pixel electrode. The electrophoretic material moves according to an electric field generated between the barrier electrode and the first pixel electrode and between the barrier electrode and the second pixel electrode, so that a plurality of gray scales is displayed through the pixel.

Abstract: An electrophoresis display apparatus includes a plurality of pixels. Each pixel includes a boost capacitor including a pixel electrode and a storage electrode a thin film transistor configured to apply a data voltage to the pixel electrode in response to a gate signal. A level of a storage voltage applied to the storage electrode of the boost capacitor is configured to be changed after the data voltage is applied to the pixel electrode, and a voltage level of the pixel electrode is configured to be boosted by the boost capacitor from a level of the data voltage to a boosted voltage by the change in the level of the storage voltage.

Abstract: A polarizing assembly includes a polarizing substrate which transmits a specific linearly-polarized light of a light incident thereto and a patterned retarder. The patterned retarder includes first retarder patterns which convert the light for a left-eye image transmitted by the polarizing substrate into a first polarized light and second retarder patterns which convert the light for a right-eye image transmitted by the polarizing substrate into a second polarized light. The first retarder patterns have a light axis substantially perpendicular to a light axis of the second retarder patterns. The polarizing substrate includes a polarizing plate which transmits the specific linearly-polarized light of the light incident thereto and a glass fiber reinforced plastic substrate which is attached to the polarizing plate.

Abstract: A super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

Abstract: A method of fabricating an IPS active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed for three times for the manufacture: forming a gate electrode, a comb pixel electrode, a common electrode for shielding a video signal line (or a source electrode), a contact pad in said pixel electrode, and a video signal line for shielding said contact pad in common electrode, forming a separate thin film semiconductor layer component, and a contact hole, forming a source electrode, a drain electrode, a common electrode at the center of a pixel and a comb common electrode, such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method is provided.

Abstract: The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

Abstract: A method of fabricating MVA active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed three times for the manufacture: forming a gate electrode, a pixel electrode, a common electrode and a contact pad in said pixel electrode, forming a separate thin film semiconductor layer component, and a contact hole,forming a source electrode, a drain electrode and an orientation control electrode such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method is provided.

Abstract: A super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

Abstract: A super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

Abstract: A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.