Abstract: A semiconductor element is disclosed including a construction with electrode-dividing grooves, in which a dark current is smaller than in existing examples. A method of forming such grooves is also disclosed. In an embodiment, grooves, which electrically divide an electrode layer formed on the surface of a substrate, are formed with a V-shaped cross-sectional shape, groove side walls in the electrode layer, constituting the grooves, being sloping surfaces. An embodiment of the method of forming the grooves includes using a dicing blade having a blade distal end portion which is sharpened into a V-shape to cut a semiconductor wafer in which multiple patterns of semiconductor elements including an electrode layer on the surface of a substrate are formed, forming the grooves having a V-shaped cross-sectional shape which divide the electrode layer in each semiconductor element.

Abstract: A semiconductor element is disclosed including a construction with electrode-dividing grooves, in which a dark current is smaller than in existing examples. A method of forming such grooves is also disclosed. In an embodiment, grooves, which electrically divide an electrode layer formed on the surface of a substrate, are formed with a V-shaped cross-sectional shape, groove side walls in the electrode layer, constituting the grooves, being sloping surfaces. An embodiment of the method of forming the grooves includes using a dicing blade having a blade distal end portion which is sharpened into a V-shape to cut a semiconductor wafer in which multiple patterns of semiconductor elements including an electrode layer on the surface of a substrate are formed, forming the grooves having a V-shaped cross-sectional shape which divide the electrode layer in each semiconductor element.

Abstract: A semiconductor element is disclosed including a construction with electrode-dividing grooves, in which a dark current is smaller than in existing examples. A method of forming such grooves is also disclosed. In an embodiment, grooves, which electrically divide an electrode layer formed on the surface of a substrate, are formed with a V-shaped cross-sectional shape, groove side walls in the electrode layer, constituting the grooves, being sloping surfaces. An embodiment of the method of forming the grooves includes using a dicing blade having a blade distal end portion which is sharpened into a V-shape to cut a semiconductor wafer in which multiple patterns of semiconductor elements including an electrode layer on the surface of a substrate are formed, forming the grooves having a V-shaped cross-sectional shape which divide the electrode layer in each semiconductor element.

Abstract: A method of manufacturing an LCD device which includes a gate line having an effective display area which includes an aluminum alloy layer and an aluminum oxide layer. The gate line also includes a gate terminal portion which is made up of the same aluminum alloy layer with a molybdenum alloy layer formed thereon. To form this structure, an insulating substrate of the LCD device, with the laminated structure of the aluminum alloy layer and the molybdenum layer, is immersed in an electrolytic solution. During the immersion, the molybdenum layer is etched off the aluminum alloy in the effective displaying area, while the etching is prevented in the gate terminal area by a protective layer. Following this, the aluminum oxide layer is formed over the aluminum alloy in the effected display area while the device is still immersed in the electrolytic solution.

Abstract: A method of manufacturing an LCD device which includes a gate line having an effective display area which includes an aluminum alloy layer and an aluminum oxide layer. The gate line also includes a gate terminal portion which is made up of the same aluminum alloy layer with a molybdenum alloy layer formed thereon. To form this structure, an insulating substrate of the LCD device, with the laminated structure of the aluminum alloy layer and the molybdenum layer, is immersed in an electrolytic solution. During the immersion, the molybdenum layer is etched off the aluminum alloy in the effective displaying area, while the etching is prevented in the gate terminal area by a protective layer. Following this, the aluminum oxide layer is formed over the aluminum alloy in the effected display area while the device is still immersed in the electrolytic solution.

Abstract: The present invention provides a liquid crystal display device, each of gate terminals of which has a laminated structure formed of an aluminum alloy thin film and a molybdenum alloy thin film stacked on the aluminum alloy thin film, and forms respective gate lines by converting the molybdenum alloy thin film of the laminated structure into an aluminum oxide thin film in a effective displaying area of the liquid crystal display device. According to the present invention, any displaying errors of the liquid crystal display device caused by deterioration of insulation between wiring patterns formed therein (like the gate lines) during manufacturing processes thereof will be avoided without adding any fabrication steps to the manufacturing processes thereof.