Abstract: The present invention relates to integrated structures of III-V and Silicon materials for making optoelectronic devices on chip compatible with complimentary metal oxide semiconductor (CMOS). As a result, various light generation, detection, switching, modulation, filtering, multiplexing, signal manipulation and beam splitting devices could be fabricated in semiconductor material such as silicon on insulator (SOI) and other material substrate.

Abstract: A nonlinear optical device includes a waveguide adjacent a substrate. The waveguide is preferably formed of a polymer or other matrix material that contains chromophores having different dipole moment directions when in respective different energy states. The chromophores may be poled to have alternating first and second dipole moment directions thereby defining corresponding alternately poled waveguide portions. Accordingly, quasi-phase matching in the waveguide may be readily achieved for application in optical frequency conversion, for example. The chromophores preferably exhibit relatively high second-order nonlinearity and may be poled to have opposite first and second dipole moment directions.