Patents by Inventor Salahuddin RAJU

Salahuddin RAJU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for Manufacturing Ferromagnetic-Dielectric Composite Material
    Publication number: 20230343602
    Abstract: A method for manufacturing a ferromagnetic-dielectric composite material comprises: (a) placing patterned ferromagnetic layer regions, in a patterning substrate assembly that includes a patterning substrate and a first dielectric layer, in physical contact with a second dielectric layer, the second dielectric layer in a receiving substrate assembly that includes a receiving substrate, (b) forming a bond between the patterned ferromagnetic layer regions and the second dielectric layer; (c) releasing the patterning substrate from the patterning substrate assembly to transfer the patterned ferromagnetic layer regions and the first dielectric layer from the patterning substrate assembly to the receiving substrate assembly; and (d) releasing the receiving substrate from the receiving substrate assembly to form the ferromagnetic-dielectric composite material.
    Type: Application
    Filed: March 22, 2022
    Publication date: October 26, 2023
    Inventors: Michael Lekas, Salahuddin Raju, Noah Sturcken, Ryan Davies, Denis Shishkov
  • IC structure with air gaps and protective layer and method for manufacturing the same
    Patent number: 11094581
    Abstract: Provided is an integrated circuit structure and a method for manufacturing the same. The integrated circuit structure comprises a substrate; a plurality of interconnecting structures on the substrate, each of the interconnecting structures comprises side surfaces and a top surface, the side surfaces directly define air gaps therebetween isolating the interconnecting structures from each other; and a planar protective layer on top of the plurality of interconnecting structures covering all of the air gaps. The protective layer comprises a sheltering film and a supporting film.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: August 17, 2021
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Salahuddin Raju, Man Sun John Chan, Clarissa Cyrilla Prawoto
  • IC STRUCTURE WITH AIR GAPS AND PROTECTIVE LAYER AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20200235000
    Abstract: Provided is an integrated circuit structure and a method for manufacturing the same. The integrated circuit structure comprises a substrate; a plurality of interconnecting structures on the substrate, each of the interconnecting structures comprises side surfaces and a top surface, the side surfaces directly define air gaps therebetween isolating the interconnecting structures from each other; and a planar protective layer on top of the plurality of interconnecting structures covering all of the air gaps. The protective layer comprises a sheltering film and a supporting film.
    Type: Application
    Filed: February 28, 2018
    Publication date: July 23, 2020
    Inventors: Salahuddin RAJU, Man Sun John CHAN, Clarissa Cyrilla PRAWOTO