Abstract: A light-emitting device for generating incoherent light comprises a substrate, a semiconductor structure, and a first metallic conductor formed on the substrate. The semiconductor structure comprises a top face, a bottom face, outer side faces, a first light-emitting part, a second light-emitting part, and light-extraction surfaces arranged for harvesting light from the semiconductor structure and being distant from the outer side faces. Each of the first and second light-emitting parts comprises a lower semiconductor layer on the substrate, an upper semiconductor layer on the lower semiconductor layer, and an active region between the lower and upper semiconductors for generating light. The first metallic conductor electrically connects the upper semiconductor layer of the first light-emitting part with the lower semiconductor layer of the second light-emitting part. The substrate comprises a non-semiconductor material.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.