Patents by Inventor Saleem Zaidi
Saleem Zaidi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130306549Abstract: A nano porous membrane having a uniform array of nanopores etch-formed in a thin film structure (e.g. (100)-oriented single crystal silicon) having a predetermined thickness, by (a) using interferometric lithography to create an etch pattern comprising a plurality array of unit patterns having a predetermined width/diameter, (b) using the etch pattern to etch frustum-shaped cavities or pits in the thin film structure such that the dimension of the frustum floors of the cavities are substantially equal to a desired pore size based on the predetermined thickness of the thin film structure and the predetermined width/diameter of the unit patterns, and (c) removing the frustum floors at a boundary plane of the thin film structure to expose, open, and thereby create the nanopores substantially having the desired pore size.Type: ApplicationFiled: July 23, 2013Publication date: November 21, 2013Inventors: Joseph W. Tringe, Rodney L. Balhorn, Saleem Zaidi
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Patent number: 8512588Abstract: A method of fabricating a nanoporous membrane filter having a uniform array of nanopores etch-formed in a thin film structure (e.g. (100)-oriented single crystal silicon) having a predetermined thickness, by (a) using interferometric lithography to create an etch pattern comprising a plurality array of unit patterns having a predetermined width/diameter, (b) using the etch pattern to etch frustum-shaped cavities or pits in the thin film structure such that the dimension of the frustum floors of the cavities are substantially equal to a desired pore size based on the predetermined thickness of the thin film structure and the predetermined width/diameter of the unit patterns, and (c) removing the frustum floors at a boundary plane of the thin film structure to expose, open, and thereby create the nanopores substantially having the desired pore size.Type: GrantFiled: August 13, 2010Date of Patent: August 20, 2013Assignee: Lawrence Livermore National Security, LLCInventors: Joseph W. Tringe, Rodney L. Balhorn, Saleem Zaidi
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Publication number: 20120037591Abstract: A method of fabricating a nanoporous membrane filter having a uniform array of nanopores etch-formed in a thin film structure (e.g. (100)-oriented single crystal silicon) having a predetermined thickness, by (a) using interferometric lithography to create an etch pattern comprising a plurality array of unit patterns having a predetermined width/diameter, (b) using the etch pattern to etch frustum-shaped cavities or pits in the thin film structure such that the dimension of the frustum floors of the cavities are substantially equal to a desired pore size based on the predetermined thickness of the thin film structure and the predetermined width/diameter of the unit patterns, and (c) removing the frustum floors at a boundary plane of the thin film structure to expose, open, and thereby create the nanopores substantially having the desired pore size.Type: ApplicationFiled: August 13, 2010Publication date: February 16, 2012Inventors: Joseph W. Tringe, Rodney L. Balhorn, Saleem Zaidi
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Patent number: 8093474Abstract: A nanostructure includes a nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there between. A nanostructure in another embodiment includes a substrate having an area with a nanofeature; and a nanowire extending from the nanofeature, the nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there between. A method for forming a nanostructure is also presented. A method for reading and writing data is also presented. A method for preparing nanoparticles is also presented.Type: GrantFiled: March 19, 2008Date of Patent: January 10, 2012Assignee: Lawrence Livermore National Security, LLCInventors: Saleem Zaidi, Joseph W. Tringe, Ganesh Vanamu, Rajiv Prinja
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Publication number: 20080230763Abstract: A nanostructure includes a nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there between. A nanostructure in another embodiment includes a substrate having an area with a nanofeature; and a nanowire extending from the nanofeature, the nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there between. A method for forming a nanostructure is also presented. A method for reading and writing data is also presented. A method for preparing nanoparticles is also presented.Type: ApplicationFiled: March 19, 2008Publication date: September 25, 2008Inventors: Saleem Zaidi, Joseph W. Tringe, Ganesh Vanamu, Rajiv Prinja
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Patent number: 5759744Abstract: Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material.Type: GrantFiled: March 16, 1995Date of Patent: June 2, 1998Assignee: University of New MexicoInventors: Steven R.J. Brueck, Xiaolan Chen, Saleem Zaidi, Daniel J. Devine
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Patent number: 5426498Abstract: A displacement measuring method and device is disclosed in which speckle amplitude interferometry within a single speckle feature or a small number of features of a speckle pattern is used to achieve sub-fringe accuracy with a single detector and to measure displacement of the object under investigation with sub-wavelength accuracy at measurement speeds consistent with real-time control of manufacturing processes. The same technique applied to multiple spots on a sample with optical means for causing interference between different combinations of scattered fields, including fields from different illuminated spots, permits measurements of the total sample motion.Type: GrantFiled: April 4, 1994Date of Patent: June 20, 1995Assignee: University of New MexicoInventors: Steven R. J. Brueck, David B. Burckel, Andrew Frauenglass, Saleem Zaidi
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Patent number: 5415835Abstract: In microelectronic processing, the method of producing complex, two-dimensional patterns on a photosensitive layer with dimensions in the extreme submicron range. A photosensitive layer is first exposed to two beams of coherent radiation to form an image of a first interference pattern on the surface of the layer. The layer is subsequently exposed to one or more interference pattern(s) that differ from the first interference pattern in some way, such as by varying the incident angle of the beams, the optical intensity, the periodicity, rotational orientation, translational position, by using complex amplitude or phase masks in one or both of the coherent beams, or a combination of the above. Desired regions of the complex pattern thus produced are isolated with a further exposure of the photosensitive layer using any conventional lithography.Type: GrantFiled: September 16, 1992Date of Patent: May 16, 1995Assignee: University of New MexicoInventors: Steven R. J. Brueck, Saleem Zaidi, An-Shyang Chu
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Patent number: RE35930Abstract: In microelectronic processing, the method of producing complex, two-dimensional patterns on a photosensitive layer with dimensions in the extreme submicron range. A photosensitive layer is first exposed to two beams of coherent radiation to form an image of a first interference pattern on the surface of the layer. The layer is subsequently exposed to one or more interference pattern(s) that differ from the first interference pattern in some way, such as by varying the incident angle of the beams, the optical intensity, the periodicity, rotational orientation, translational position, by using complex amplitude or phase masks in one or both of the coherent beams, or a combination of the above. Desired regions of the complex pattern thus produced are isolated with a further exposure of the photosensitive layer using any conventional lithography.Type: GrantFiled: April 22, 1996Date of Patent: October 20, 1998Assignee: the University of New MexicoInventors: Steven R. J. Brueck, Saleem Zaidi, An-Shyang Chu
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Patent number: RE36113Abstract: In microelectronic processing, the method of producing complex, two-dimensional patterns on a photosensitive layer with dimensions in the extreme submicron range. A photosensitive layer is first exposed to two beams of coherent radiation to form an image of a first interference pattern on the surface of the layer. The layer is subsequently exposed to one or more interference pattern(s) that differ from the first interference pattern in some way, such as by varying the incident angle of the beams, the optical intensity, the periodicity, rotational orientation, translational position, by using complex amplitude or phase masks in one or both of the coherent beams, or a combination of the above. Desired regions of the complex pattern thus produced are isolated with a further exposure of the photosensitive layer using any conventional lithography.Type: GrantFiled: April 22, 1996Date of Patent: February 23, 1999Assignee: The University of New MexicoInventors: Steven R. J. Brueck, Saleem Zaidi, An-Shyang Chu