Abstract: The disclosed subject matter relates to a rinse and methods of use thereof for removing an edge protection layer and residual hardmask components (e.g., metals) from the edge and at least one proximate surface of a wafer/substrate where the rinse includes acetic acid and/or a halogenated acetic acid of structure (A) wherein R1 and R2 are independently hydrogen or a halogen and R3 is a halogen and (ii) a compound having structure (B) wherein each of Ra, Rb, Rc, Rd, Re, Rf, Rg and Rh may independently be hydrogen, a substituted or an unsubstituted alkyl group, a substituted or an unsubstituted halogenated alkyl group, a substituted or an unsubstituted alkyl carbonyl group, a halogen, and a hydroxy group.

Abstract: The present invention relates to a novel spin coatable composition comprising (a) metallosilicic acid; (b) at least one compound comprising two or more 4-hydroxyphenyl groups; and, c) a solvent. The component b) can be a 4-hydroxyphenyl compound of structure (I) wherein W is a linking group chosen from the group consisting of an organic linking moiety, a heteroatom containing linking moiety and a direct valence bond, m is a positive integer of 1 and n is a positive integer equal to 1 or and Ri, Rii, Riii and Riv are independently chosen substituents from a group consisting of hydrogen, (C1-C6) alkyl, (C1-C6) alkoxy, (C6-C20) aryl, halides (such as Cl, I, F), hydroxyl, alkylcarbonyl (alkyl-C(?O)—), alkylcarbonyloxy (alkyl-C(?O)—O—), alkyloxycarbonyl (alkyl-O—C(?O)—), alkyloxycarbonyloxy (alkyl-O—C(?O)—O—) and mixtures of these; and a solvent. The present invention further relates to processes using the novel compositions.

Abstract: The present invention relates to a novel spin coatable composition comprising (a) metallosilicic acid; (b) at least one compound comprising two or more 4-hydroxyphenyl groups; and, c) a solvent. The component b) can be a 4-hydroxyphenyl compound of structure (I) wherein W is a linking group chosen from the group consisting of an organic linking moiety, a heteroatom containing linking moiety and a direct valence bond, m is a positive integer of 1 and n is a positive integer equal to 1 or and Ri, Rii, Riii and Riv are independently chosen substituents from a group consisting of hydrogen, (C1-C6) alkyl, (C1-C6) alkoxy, (C6-C20) aryl, halides (such as Cl, I, F), hydroxyl, alkylcarbonyl (alkyl-C(?O)—), alkylcarbonyloxy (alkyl-C(?O)—O—), alkyloxycarbonyl (alkyl-O—C(?O)—), alkyloxycarbonyloxy (alkyl-O—C(?O)—O—) and mixtures of these; and a solvent. The present invention further relates to processes using the novel compositions.

Abstract: Antireflective coating compositions and related polymers are disclosed.

Abstract: Antireflective coating compositions and related polymers are disclosed.

Abstract: The present invention relates to an undercoating composition for a photoresist comprising a polymer which is insoluble in an aqueous alkali developer but becomes soluble prior to development, and a photoacid generator which produces a strong acid upon exposure to radiation, and further where the polymer is transparent at the exposure radiation. The invention also relates to a process for imaging the undercoating composition.

Abstract: The present invention provides for a light-sensitive photoresist composition useful for imaging thick films, comprising a polymer which is insoluble in an aqueous alkali developer but becomes soluble prior to development, a photoacid generator which produces a strong acid upon irradiation and a photobleachable dye. The invention further provides for a process for imaging the photoresist of the present invention, especially where the thickness of the photoresist is up to 200 microns and where the process comprises a single exposure step.