Patents by Inventor Salih Muhsin Celik

Salih Muhsin Celik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tunneling field effect transistor (TFET) having a semiconductor fin structure
    Patent number: 10388772
    Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: August 20, 2019
    Assignee: STMicroelectronics, Inc.
    Inventors: Qing Liu, Salih Muhsin Celik
  • TUNNELING FIELD EFFECT TRANSISTOR (TFET) HAVING A SEMICONDUCTOR FIN STRUCTURE
    Publication number: 20180301547
    Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.
    Type: Application
    Filed: June 20, 2018
    Publication date: October 18, 2018
    Applicant: STMicroelectronics, Inc.
    Inventors: Qing Liu, Salih Muhsin Celik
  • Tunneling field effect transistor (TFET) having a semiconductor fin structure
    Patent number: 10026830
    Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: July 17, 2018
    Assignee: STMicroelectronics, Inc.
    Inventors: Qing Liu, Salih Muhsin Celik
  • TUNNELING FIELD EFFECT TRANSISTOR (TFET) HAVING A SEMICONDUCTOR FIN STRUCTURE
    Publication number: 20160322479
    Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.
    Type: Application
    Filed: April 29, 2015
    Publication date: November 3, 2016
    Applicant: STMicroelectronics, Inc.
    Inventors: Qing Liu, Salih Muhsin Celik