Abstract: Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.

Abstract: Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.

Abstract: Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.

Abstract: The present invention relates to dissipating heat from an interconnect formed in a low thermal conductivity dielectric in an integrated circuit apparatus. The integrated circuit apparatus includes integrated circuit devices interconnected by conductive interconnection metallurgy and input/output pads subject to electrostatic discharge events. At least one latent heat of transformation absorber is associated with at least one of the input/output pads for preventing the energy generated by an electrostatic discharge event from damaging the conductive interconnection metallurgy.

Abstract: A recessed bond pad within an electronic device on a substrate, and associated method of fabrication. The electronic device includes N contiguous levels of interconnect metallurgy, with level N coupled to the substrate. A first group of metallic etch stops is formed at level M≦N, and a second group of metallic etch stops is formed at level M−1. The second group conductively contacts the first group in an overlapping multilevel matrix pattern. A recessed copper pad is formed at level K≦M−2. A cylindrical space that encloses the metal pad encompasses levels 1,2, . . . , M−1 above the first group, and levels 1,2, . . . , M−2 above the second group. Dielectric material in the cylindrical space is etched away, leaving a void supplanting the etched dielectric material, and leaving exposed surfaces of the cylindrical space. The copper pad is exposed and recessed within the cylindrical space.

Abstract: A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.

Abstract: Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.

Abstract: A recessed bond pad within an electronic device on a substrate, and associated method of fabrication. The electronic device includes N contiguous levels of interconnect metallurgy, with level N coupled to the substrate. A first group of metallic etch stops is formed at level M≦N, and a second group of metallic etch stops is formed at level M−1. The second group conductively contacts the first group in an overlapping multilevel matrix pattern. A recessed copper pad is formed at level K≦M−2. A cylindrical space that encloses the metal pad encompasses levels 1,2, . . . , M−1 above the first group, and levels 1,2, . . . , M−2 above the second group. Dielectric material in the cylindrical space is etched away, leaving a void supplanting the etched dielectric material, and leaving exposed surfaces of the cylindrical space. The copper pad is exposed and recessed within the cylindrical space.

Abstract: A recessed bond pad within an electronic device on a substrate, and associated method of fabrication. The electronic device includes N contiguous levels of interconnect metallurgy, with level N coupled to the substrate. A first group of metallic etch stops is formed at level M≦N, and a second group of metallic etch stops is formed at level M−1. The second group conductively contacts the first group in an overlapping multilevel matrix pattern. A recessed copper pad is formed at level K≦M−2. A cylindrical space that encloses the metal pad encompasses levels 1,2, . . . , M−1 above the first group, and levels 1,2, . . . , M−2 above the second group. Dielectric material in the cylindrical space is etched away, leaving a void supplanting the etched dielectric material, and leaving exposed surfaces of the cylindrical space. The copper pad is exposed and recessed within the cylindrical space.

Abstract: A recessed bond pad within an electronic device on a substrate, and associated method of fabrication. The electronic device includes N contiguous levels of interconnect metallurgy, with level N coupled to the substrate. A first group of metallic etch stops is formed at level M≦N, and a second group of metallic etch stops is formed at level M-1. The second group conductively contacts the first group in an overlapping multilevel matrix pattern. A recessed copper pad is formed at level K≦M-2. A cylindrical space that encloses the metal pad encompasses levels 1,2, . . . , M-1 above the first group, and levels 1,2, . . . , M-2 above the second group. Dielectric material in the cylindrical space is etched away, leaving a void supplanting the etched dielectric material, and leaving exposed surfaces of the cylindrical space. The copper pad is exposed and recessed within the cylindrical space. An aluminum layer is conformally formed to encapsulate the exposed copper pad, to protect the copper pad from oxidation.

Abstract: A recessed bond pad within an electronic device on a substrate, and associated method of fabrication. The electronic device includes N contiguous levels of interconnect metallurgy, with level N coupled to the substrate. A first group of metallic etch stops is formed at level M≦N, and a second group of metallic etch stops is formed at level M−1. The second group conductively contacts the first group in an overlapping multilevel matrix pattern. A recessed copper pad is formed at level K≦M−2. A cylindrical space that encloses the metal pad encompasses levels 1,2, . . . , M−1 above the first group, and levels 1,2, . . . , M−2 above the second group. Dielectric material in the cylindrical space is etched away, leaving a void supplanting the etched dielectric material, and leaving exposed surfaces of the cylindrical space. The copper pad is exposed and recessed within the cylindrical space.