Patents by Inventor Salvador H. Talisa

Salvador H. Talisa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5974335
    Abstract: A high-temperature superconductive microwave delay line that operates in an essentially pure TEM field configuration in a compact assembly. The delay line is a planar signal delay line which includes first and second substrates made of first and second dielectric materials; each substrate can be LAO material. First and second patterned delay line segments having a configuration, are formed of first and second conductive materials on the obverse sides of the first and second substrates, respectively. On the reverse side of each of the first and second substrates, respective first and second ground planes are formed using respective first and second conductive materials, which are preferred to be high-temperature superconductive films, such as YBCO films. The delay line also includes coupling means for coupling the first patterned delay line segment to the second patterned delay line segment, thus bringing the two patterned delay line segments into substantial contact.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: October 26, 1999
    Assignee: Northrop Grumman Corporation
    Inventors: Salvador H. Talisa, David J. Janocko, Richard S. Nye, Stanley J. Pieseski, Daniel C. Buck, Paul LePage, William E. McGann, Charles Moskowitz
  • Patent number: 5878334
    Abstract: The present invention provides for a low power receiver protector and stepped attenuator for conditioning a received input signal within a microwave receiver front end. The low power receiver protector includes a detector for generating a surge signal in response to the received input signal exceeding a predetermined threshold, a delay line for delaying the received input signal for fixed duration, and a limiter for reducing the voltage of the received input signal in response to the generation of the surge signal. The stepped attenuator includes a plurality of cells each having an attenuation transmission path which includes an attenuator for providing a predetermined amount of attenuation of the received input signal. Each attenuation transmission path, bypass transmission path and delay line comprise a high temperature superconductor to provide minimal loss and reduced size.
    Type: Grant
    Filed: September 30, 1996
    Date of Patent: March 2, 1999
    Assignee: Northrop Grumman Corporation
    Inventors: Salvador H. Talisa, Carl E. Nothnick, Steven N. Stitzer, Sumantrai D. Patel, James D. Woermbke
  • Patent number: 5747873
    Abstract: A system for incorporating superconductor circuits and semiconductor circuits in multilayered structures. A carrier material is chosen that is a good thermal match with the preferred superconductor substrates. The preferred superconductor substrate materials are lanthanum aluminate, magnesium oxide and neodymium gallate. The substrate carrier material should provide adequate thermal match through the range of operating temperatures which are preferably from room temperature to 77K. The preferred carrier material is a low temperature cofired ceramic (LTCC) which allows for multilayered structures to be developed which incorporate the superconductor circuitry and the semiconductor elements. The LTCC is composed of crystalline quartz particles in a borosilicate glass matrix. The percentage of quartz may be adjusted to adjust the thermal expansion characteristics of the LTCC.
    Type: Grant
    Filed: September 27, 1996
    Date of Patent: May 5, 1998
    Assignee: Northrop Grumman Corporation
    Inventors: Salvador H. Talisa, Michael A. Janocko, Deborah P. Partlow, Andrew J. Piloto
  • Patent number: 5693595
    Abstract: A termination for a high-temperature superconductive thin-film microwave device formed on the obverse side of a substrate with the reverse side of the substrate having a ground plane. The termination can include a thin-film resistor being integral with an operative component, with the substrate being a preselected dielectric substrate. The resistor can have an epitaxially-formed layer of molybdenum metal of a first preselected thickness on the obverse side, and an epitaxially-formed layer of titanium metal of a second preselected thickness thereon. The termination includes a epitaxially-formed thin-film capacitor integral with the resistor. The capacitor can have a layer of titanium metal formed on a portion of the obverse side with a layer of gold metal formed thereon. The substrate can be lanthanum aluminate, and the high-temperature superconductive film can be a yttrium-barium-copper-oxide film. The ground plane can be made of a high-temperature superconductive film and annealed gold.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: December 2, 1997
    Assignee: Northrop Grumman Corporation
    Inventors: Salvador H. Talisa, Daniel L. Meier
  • Patent number: 5017896
    Abstract: In the present invention magnetostatic wave (MSW) filters of the delay line and resonator type responsive to multimode MSW signals trap a desired MSW mode of the signal and attenuate untrapped modes of the signal in order to provide a higher order band rejection characteristic. In a preferred embodiment a low loss YIG film is disposed on a substrate. An apertured metallization layer on the YIG film defines a region of MSW propagation within the aperture and a metallization layer at the opposite side of the YIG film traps a selected MSW mode in said aperture. A region of high attenuation for MSW waves adjacent the desired propagation region absorbs untrapped MSW waves.
    Type: Grant
    Filed: January 16, 1990
    Date of Patent: May 21, 1991
    Assignee: Westinghouse Electric Corp.
    Inventors: John D. Adam, Salvador H. Talisa
  • Patent number: 4926116
    Abstract: A wide band large dynamic range current sensor operable to measure current leakage in an external conductor utilizing a magnetostatic spin wave delay line (MSW) device is described. The measurable changes in well known electromagnetic properties of ferrite films, as utilized in MSW devices when these films are exposed to external current induced magnetic fields, results in a current sensitive detection device. A method of current detection using this device is also described. Specific, low power microelectronic applications as well as, high power, local and remote current detecting embodiments are included.
    Type: Grant
    Filed: October 31, 1988
    Date of Patent: May 15, 1990
    Assignee: Westinghouse Electric Corp.
    Inventor: Salvador H. Talisa