Patents by Inventor Salvatore Antonio LOMBARDO

Salvatore Antonio LOMBARDO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process
    Patent number: 8574945
    Abstract: An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: November 5, 2013
    Assignee: STMicroelectronics S.r.l.
    Inventors: Delfo Nunziato Sanfilippo, Emilio Antonio Sciacca, Piero Giorgio Fallica, Salvatore Antonio Lombardo
  • Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process
    Patent number: 8471293
    Abstract: An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.
    Type: Grant
    Filed: January 20, 2009
    Date of Patent: June 25, 2013
    Assignee: STMicroelectronics S.r.l.
    Inventors: Delfo Nunziato Sanfilippo, Emilio Antonio Sciacca, Piero Giorgio Fallica, Salvatore Antonio Lombardo
  • ARRAY OF MUTUALLY INSULATED GEIGER-MODE AVALANCHE PHOTODIODES, AND CORRESPONDING MANUFACTURING PROCESS
    Publication number: 20120009722
    Abstract: An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.
    Type: Application
    Filed: September 22, 2011
    Publication date: January 12, 2012
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: DELFO NUNZIATO SANFILIPPO, EMILIO ANTONIO SCIACCA, PIERO GIORGIO FALLICA, SALVATORE ANTONIO LOMBARDO
  • ARRAY OF MUTUALLY INSULATED GEIGER-MODE AVALANCHE PHOTODIODES, AND CORRESPONDING MANUFACTURING PROCESS
    Publication number: 20090184317
    Abstract: An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.
    Type: Application
    Filed: January 20, 2009
    Publication date: July 23, 2009
    Applicant: STMicroelectronics S.r.l.
    Inventors: Delfo Nunziato SANFILIPPO, Emilio Antonio SCIACCA, Piero Giorgio FALLICA, Salvatore Antonio LOMBARDO