Patents by Inventor Salvatore Cascino
Salvatore Cascino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240006527Abstract: The present disclosure is directed to an electronic device including a semiconductor body having a first electrical conductivity and provided with a front side; an active area of the semiconductor body, accommodating the source and gate regions of the electronic device and configured to accommodate, in use, a conductive channel of the electronic device; and an edge region of the electronic device, surrounding the active area. The edge region accommodates at least in part: i) an edge termination region, having a second electrical conductivity opposite to the first electrical conductivity, extending into the semiconductor body at the front side; and ii) a gate connection terminal of conductive material, electrically coupled to the gate region, extending on the front side partially superimposed on the edge termination region and capacitively coupled with a portion of the semiconductor body adjacent and external to the edge termination region.Type: ApplicationFiled: September 15, 2023Publication date: January 4, 2024Applicant: STMICROELECTRONICS S.r.l.Inventors: Salvatore CASCINO, Alfio GUARNERA, Mario Giuseppe SAGGIO
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Publication number: 20230317843Abstract: The present disclosure is directed to an electronic device including a semiconductor body having a first electrical conductivity and provided with a front side; an active area of the semiconductor body, accommodating the source and gate regions of the electronic device and configured to accommodate, in use, a conductive channel of the electronic device; and an edge region of the electronic device, surrounding the active area. The edge region accommodates at least in part: i) an edge termination region, having a second electrical conductivity opposite to the first electrical conductivity, extending into the semiconductor body at the front side; and ii) a gate connection terminal of conductive material, electrically coupled to the gate region, extending on the front side partially superimposed on the edge termination region and capacitively coupled with a portion of the semiconductor body adjacent and external to the edge termination region.Type: ApplicationFiled: March 22, 2023Publication date: October 5, 2023Applicant: STMICROELECTRONICS S.r.l.Inventors: Salvatore CASCINO, Alfio GUARNERA, Mario Giuseppe SAGGIO
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Patent number: 11768148Abstract: A particle detector formed by a body defining a chamber and housing a light source and a photodetector. A reflecting surface is formed by a first reflecting region and a second reflecting region that have a respective curved shape. The curved shapes are chosen from among portions of ellipsoidal, paraboloidal, and spherical surfaces. The first reflecting region faces the light source and the second reflecting region faces the photodetector. The first reflecting region has an own first focus, and the second reflecting region has an own first focus. The first focus of the first reflecting region is arranged in an active volume of the body, designed for detecting particles, and the photodetector is arranged on the first focus of the second reflecting region.Type: GrantFiled: July 2, 2021Date of Patent: September 26, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Antonello Santangelo, Salvatore Cascino, Viviana Cerantonio
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Patent number: 11686673Abstract: The device is formed in a casing including a support, a spacer body, and a mirror element fixed together. A light-emitting element and a light-receiving element are arranged on a bearing surface of the support and face a reflecting surface of the mirror element. The light-emitting element is configured to generate infrared radiation, and the light-receiving element is configured to receive light radiation reflected by the reflecting surface. The spacer body has an emission opening housing the light-emitting element and a reception opening housing the light-receiving element; the reception opening comprises a radiation-limitation portion configured to enable entry of reflected light radiation having an angle, with respect to a normal to the bearing surface, of less than a preset value.Type: GrantFiled: March 30, 2021Date of Patent: June 27, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Maria Eloisa Castagna, Salvatore Cascino, Viviana Cerantonio, Antonello Santangelo
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Publication number: 20230134850Abstract: A semiconductor power device has a maximum nominal voltage and includes: a first conduction terminal and a second conduction terminal; a semiconductor body, containing silicon carbide and having a first conductivity type; body wells having a second conductivity type, housed in the semiconductor body and separated from one another by a body distance; source regions housed in the body wells; and floating pockets having the second conductivity type, formed in the semiconductor body at a distance from the body wells between a first face and a second face of the semiconductor body.Type: ApplicationFiled: October 11, 2022Publication date: May 4, 2023Applicant: STMICROELECTRONICS S.R.L.Inventors: Salvatore CASCINO, Alfio GUARNERA, Mario Giuseppe SAGGIO
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Publication number: 20220238738Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.Type: ApplicationFiled: April 12, 2022Publication date: July 28, 2022Applicant: STMICROELECTRONICS S.R.L.Inventors: Antonello SANTANGELO, Massimo Cataldo MAZZILLO, Salvatore CASCINO, Giuseppe LONGO, Antonella SCIUTO
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Patent number: 11335823Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.Type: GrantFiled: March 29, 2019Date of Patent: May 17, 2022Assignee: STMICROELECTRONICS S.R.L.Inventors: Antonello Santangelo, Massimo Cataldo Mazzillo, Salvatore Cascino, Giuseppe Longo, Antonella Sciuto
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Publication number: 20210333195Abstract: A particle detector formed by a body defining a chamber and housing a light source and a photodetector. A reflecting surface is formed by a first reflecting region and a second reflecting region that have a respective curved shape. The curved shapes are chosen from among portions of ellipsoidal, paraboloidal, and spherical surfaces. The first reflecting region faces the light source and the second reflecting region faces the photodetector. The first reflecting region has an own first focus, and the second reflecting region has an own first focus. The first focus of the first reflecting region is arranged in an active volume of the body, designed for detecting particles, and the photodetector is arranged on the first focus of the second reflecting region.Type: ApplicationFiled: July 2, 2021Publication date: October 28, 2021Applicant: STMICROELECTRONICS S.r.l.Inventors: Antonello SANTANGELO, Salvatore CASCINO, Viviana CERANTONIO
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Patent number: 11079321Abstract: The device is formed in a casing including a support, a spacer body, and a mirror element fixed together. A light-emitting element and a light-receiving element are arranged on a bearing surface of the support and face a reflecting surface of the mirror element. The light-emitting element is configured to generate infrared radiation, and the light-receiving element is configured to receive light radiation reflected by the reflecting surface. The spacer body has an emission opening housing the light-emitting element and a reception opening housing the light-receiving element; the reception opening comprises a radiation-limitation portion configured to enable entry of reflected light radiation having an angle, with respect to a normal to the bearing surface, of less than a preset value.Type: GrantFiled: September 26, 2019Date of Patent: August 3, 2021Assignee: STMICROELECTRONICS S.r.l.Inventors: Maria Eloisa Castagna, Salvatore Cascino, Viviana Cerantonio, Antonello Santangelo
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Patent number: 11073467Abstract: A particle detector formed by a body defining a chamber and housing a light source and a photodetector. A reflecting surface is formed by a first reflecting region and a second reflecting region that have a respective curved shape. The curved shapes are chosen from among portions of ellipsoidal, paraboloidal, and spherical surfaces. The first reflecting region faces the light source and the second reflecting region faces the photodetector. The first reflecting region has an own first focus, and the second reflecting region has an own first focus. The first focus of the first reflecting region is arranged in an active volume of the body, designed for detecting particles, and the photodetector is arranged on the first focus of the second reflecting region.Type: GrantFiled: September 27, 2019Date of Patent: July 27, 2021Assignee: STMICROELECTRONICS S.r.l.Inventors: Antonello Santangelo, Salvatore Cascino, Viviana Cerantonio
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Publication number: 20210215600Abstract: The device is formed in a casing including a support, a spacer body, and a mirror element fixed together. A light-emitting element and a light-receiving element are arranged on a bearing surface of the support and face a reflecting surface of the mirror element. The light-emitting element is configured to generate infrared radiation, and the light-receiving element is configured to receive light radiation reflected by the reflecting surface. The spacer body has an emission opening housing the light-emitting element and a reception opening housing the light-receiving element; the reception opening comprises a radiation-limitation portion configured to enable entry of reflected light radiation having an angle, with respect to a normal to the bearing surface, of less than a preset value.Type: ApplicationFiled: March 30, 2021Publication date: July 15, 2021Applicant: STMICROELECTRONICS S.r.l.Inventors: Maria Eloisa CASTAGNA, Salvatore CASCINO, Viviana CERANTONIO, Antonello SANTANGELO
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Patent number: 10852263Abstract: A micro-heater element for a MEMS sensor device, envisages, in a single conductive layer: an outer ring, defining inside it a window; a heat-diffusion structure, arranged within the window, separated from the outer ring by a first separation gap; and connection elements, arranged between the heat-diffusion structure and the outer ring, and designed to connect the heat-diffusion structure to the outer ring. The outer ring is designed to dissipate energy upon passage of an electric current, and the heat-diffusion structure is designed to distribute, within the micro-heater element, the heat that is transferred by the outer ring through the connection elements.Type: GrantFiled: October 22, 2018Date of Patent: December 1, 2020Assignee: STMICROELECTRONICS S.R.L.Inventors: Salvatore Cascino, Antonello Santangelo
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Publication number: 20200103334Abstract: A particle detector formed by a body defining a chamber and housing a light source and a photodetector. A reflecting surface is formed by a first reflecting region and a second reflecting region that have a respective curved shape. The curved shapes are chosen from among portions of ellipsoidal, paraboloidal, and spherical surfaces. The first reflecting region faces the light source and the second reflecting region faces the photodetector. The first reflecting region has an own first focus, and the second reflecting region has an own first focus. The first focus of the first reflecting region is arranged in an active volume of the body, designed for detecting particles, and the photodetector is arranged on the first focus of the second reflecting region.Type: ApplicationFiled: September 27, 2019Publication date: April 2, 2020Inventors: Antonello Santangelo, Salvatore Cascino, Viviana Cerantonio
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Publication number: 20200103339Abstract: The device is formed in a casing including a support, a spacer body, and a mirror element fixed together. A light-emitting element and a light-receiving element are arranged on a bearing surface of the support and face a reflecting surface of the mirror element. The light-emitting element is configured to generate infrared radiation, and the light-receiving element is configured to receive light radiation reflected by the reflecting surface. The spacer body has an emission opening housing the light-emitting element and a reception opening housing the light-receiving element; the reception opening comprises a radiation-limitation portion configured to enable entry of reflected light radiation having an angle, with respect to a normal to the bearing surface, of less than a preset value.Type: ApplicationFiled: September 26, 2019Publication date: April 2, 2020Inventors: Maria Eloisa Castagna, Salvatore Cascino, Viviana Cerantonio, Antonello Santangelo
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Patent number: 10571421Abstract: A sensor of volatile substances includes: a first electrode structure and a second electrode structure capacitively coupled, comb-fingered, and arranged coplanar in a plane; and a sensitive layer, of a sensitive material that is permeable to a volatile substance and has electrical permittivity depending upon a concentration of the volatile substance absorbed by the sensitive material. The sensitive layer extends from opposite sides of the plane.Type: GrantFiled: October 27, 2017Date of Patent: February 25, 2020Assignee: STMICROELECTRONICS S.R.L.Inventors: Antonello Santangelo, Salvatore Cascino, Roberto Modica, Viviana Cerantonio, Maurizio Moschetti, Alessandro Auditore
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Patent number: 10520457Abstract: A sensor of volatile substances including: a sensitive layer, of a sensitive material that is permeable to a volatile substance and has an electrical permittivity depending upon a concentration of the volatile substance absorbed; a first electrode structure and a second electrode structure capacitively coupled together and arranged so that a capacitance between the first electrode structure and the second electrode structure is affected by the electrical permittivity of the sensitive material; and a supply device, configured to supply a heating current through one between the first electrode structure and the second electrode structure in a first operating condition, so as to heat the sensitive layer.Type: GrantFiled: December 8, 2017Date of Patent: December 31, 2019Assignee: STMICROELECTRONICS S.R.L.Inventors: Antonello Santangelo, Salvatore Cascino, Roberto Modica, Viviana Cerantonio, Maurizio Moschetti
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Publication number: 20190305159Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.Type: ApplicationFiled: March 29, 2019Publication date: October 3, 2019Inventors: Antonello SANTANGELO, Massimo Cataldo MAZZILLO, Salvatore CASCINO, Giuseppe LONGO, Antonella SCIUTO
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Patent number: 10297677Abstract: Methods are directed to forming an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.Type: GrantFiled: March 21, 2018Date of Patent: May 21, 2019Assignee: STMicroelectronics S.r.l.Inventors: Antonello Santangelo, Salvatore Cascino, Leonardo Gervasi
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Publication number: 20190137427Abstract: A micro-heater element for a MEMS sensor device, envisages, in a single conductive layer: an outer ring, defining inside it a window; a heat-diffusion structure, arranged within the window, separated from the outer ring by a first separation gap; and connection elements, arranged between the heat-diffusion structure and the outer ring, and designed to connect the heat-diffusion structure to the outer ring. The outer ring is designed to dissipate energy upon passage of an electric current, and the heat-diffusion structure is designed to distribute, within the micro-heater element, the heat that is transferred by the outer ring through the connection elements.Type: ApplicationFiled: October 22, 2018Publication date: May 9, 2019Inventors: Salvatore CASCINO, Antonello SANTANGELO
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Publication number: 20180212042Abstract: Methods are directed to forming an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.Type: ApplicationFiled: March 21, 2018Publication date: July 26, 2018Inventors: Antonello Santangelo, Salvatore Cascino, Leonardo Gervasi