Abstract: Various methods of fabricating circuit devices are provided. In one aspect, a method of fabricating a circuit device on a substrate is provided. The method includes forming a doped silicon structure on the substrate and forming a hemispherical grain silicon film on the silicon structure. The substrate is heated from a first temperature to a second temperature while undergoing exposure to a dopant gas to add a dopant to the hemispherical grain silicon film. The method provides for improved capacitor electrode fabrication via concurrent gas exposure and substrate temperature ramp-up. In this way, dopant gas is introduced before the doped silicon structure transitions from an amorphous state to a polycrystalline state.