Abstract: A device and method for simultaneously concentrating a plurality of samples in small volumes based on the principle of cystallization. The device comprises a device for concentrating a plurality of samples comprising: a first temperature control means (12) having a plurality of container means (40/50) for containing said plurality of samples; a second complementary temperature control means (11) having a plurality of conducting means (22) which are adapted to be inserted in respective samples in said plurality of container means (40/50); and insulating means (30) for insulating said first temperature control means (12) from said temperature control means (11) such than an amount of heat from said plurality of samples is dissipated through said plurality of conducting means (22).

Abstract: An on-column detector for electrophoresis samples based on the principles of potential gradient detection, in which the electrodes for detection are physically isolated from the electrophoretic separation process, but maintains the same electrical potential as the corresponding interior of the electrophoretic separation channel. Potential gradient detection is used to measure the applied electrical field at two points within the electrophoretic channel during electrophoresis. When sample components with conductivity different from the electrophoretic medium passes between these two points, it causes a change in the potential gradient between the two points, which would be sensed by the sensing electrodes of the detector and registered by a data acquisition system. The apparatus can make use of conventional separation channel as well as separation channels on microchips.

Abstract: An optical detection system comprising an electromagnetic radiation source, a source radiation focusing and collimating means, a photodetector, an emitted radiation focusing means and a source radiation blocking panel. The radiation source is used to direct source radiation onto a sample which is disposed in a sample platform. The source radiation focusing and collimating means is disposed between the radiation source and the sample for focusing and collimating the source radiation onto the sample. The photodetector is adapted for receiving radiation emitted from the sample which has been focused by the emitted radiation focusing means. The source radiation blocking panel, disposed between the source radiation focusing and collimating means and the sample, is unique in that it is capable of reducing light scattering and interference, such that a clear signal from each individual sample can be obtained by the photodetector.

Abstract: An encapsulated copper plug on a doped silicon semiconductor substrate has a substrate surface, covered with insulation, with a plug hole with a diffusion barrier formed on the walls and the bottom of the hole to the top of the hole. The plug hole is partially filled with an electrolessly deposited copper metal plug. An encapsulating metal deposit caps the plug without any intervening oxidation and degradation. In a transition from copper to a codeposit of copper, an encapsulating Pt, Pd, and/or Ag metal deposits in the electroless bath without oxidation and degradation followed by a pure deposit of the encapsulating metal layer to cap the plug.

Abstract: An encapsulated copper plug on a doped silicon semiconductor substrate has a substrate surface, covered with insulation, with a plug hole with a diffusion barrier formed on the walls and the bottom of the hole to the top of the hole. The plug hole is partially filled with an electrolessly deposited copper metal plug. An encapsulating metal deposit caps the plug without any intervening oxidation and degradation. In a transition from copper to a codeposit of copper, an encapsulating Pt, Pd, and/or Ag metal deposits in the electroless bath without oxidation and degradation followed by a pure deposit of the encapsulating metal layer to cap the plug.

Abstract: A novel method for the activation of semiconductor substrates for highly selective electroless copper plating in multilayer interconnect metallization lines and vias/contact holes has been developed. A copper-seeded polysilicon layer is provided over the substrate to facilitate growth of copper into the vias. Subsequent rinsing and chemical-mechanical polishing processes allow removal of overgrowth of copper and the polysilicon layer to achieve overall smooth topography of the copper surface and the insulating layer surface of the substrate.

Abstract: Disclosed herein is electrophoresis buffer and a buffer kit useful in the analysis of small cations in samples containing simple or complex mixture of ions and/or neutral organic compounds in a short time and to scan unknown samples for the small cations by capillary electrophoresis with indirect optical detection. An embodiment of the disclosed CE buffer comprises complexing agents and chromophore co-ions. One of the complexing agents is a multidentate one of donor atoms of oxygen and nitrogen, particularly nitrilotriacetic acid (NTA). Other complexing agents, if any, can be crown ethers, for example, 18-crown-6. The chromophore co-ions can be produced by introducing nitrogen-containing heterocyclic compounds, in particular pyridine, to the electrophoresis buffer. The desired pH of the buffer kit is between about 2 and 4.

Abstract: An encapsulated copper plug on a doped silicon semiconductor substrate has a substrate surface, covered with insulation, with a plug hole with a diffusion barrier formed on the walls and the bottom of the hole to the top of the hole. The plug hole is partially filled with an electrolessly deposited copper metal plug. An encapsulating metal deposit caps the plug without any intervening oxidation and degradation. In a transition from copper to a codeposit of copper, an encapsulating Pt, Pd, and/or Ag metal deposits in the electroless bath without oxidation and degradation followed by a pure deposit of the encapsulating metal layer to cap the plug.

Abstract: The present invention provides a high precision three-dimensional alignment system using SPM techniques and method of using the same. The system comprises a fine distance control unit for the effective three-dimensional micromovement in the nanometer range of a planar object, and proximity detection unit to monitor the alignment process. In the preferred embodiment, the fine distance control unit comprises a set of at least three strategically positioned fine distance control elements which are capable of controlled expansion and contraction in the nanometer range. The most preferred embodiment of the fine distance control element comprises a piezoelectric tube, which crystal size may be varied by varying an applied voltage. This system may be applied to microlithography, in which case the planar object is a scribing tool having a planar base with multiple tips fabricated on one surface.