Abstract: The present disclosure is generally directed to the use of compositions that include antibodies, e.g., monoclonal, chimeric, affinity-matured or humanized antibodies, antibody fragments, etc., that specifically bind one or more epitopes within a Sortilin protein, e.g., human Sortilin or mammalian Sortilin, and have improved and/or enhanced functional characteristics, in treating and/or delaying progression of a disease or injury in an individual in need thereof.

Abstract: The present invention provides standard deviation score (SDS) calculators, which SDS calculators are useful for transforming insulin-like growth factor-1 (IGF-1) concentrations to IGF-1 standard deviation scores. In one embodiment, IGF-1 blood levels are calculated so as to take into account IGFBP-3 blood levels (and, optionally, IGF-2 blood levels) to provide an IGF-1 production rate, which can be used to calculate an IGF-1 production rate SDS. The IGF-1 SDS and IGF-1 production rate SDS are particularly useful in assessing the stimulated rate of IGF-1 production in response to, for example, growth hormone therapy.

Abstract: The present invention pertains to a method of fabricating a trench capacitor having increased capacitance. To tackle a difficult problem of etching deeper trenches having very high aspect ratio, an epitaxial silicon growth process is employed in the fabrication of next-generation trench DRAM devices. A large-capacitance trench capacitor is first fabricated in the silicon substrate. An epitaxial silicon layer is then grown on the silicon substrate. Active areas, shallow trench isolation regions, and gate conductors are formed on/in the epitaxial silicon layer.

Abstract: The present invention pertains to a method of fabricating a trench capacitor having increased capacitance. To tackle a difficult problem of etching deeper trenches having very high aspect ratio, an epitaxial silicon growth process is employed in the fabrication of next-generation trench DRAM devices. A large-capacitance trench capacitor is first fabricated in the silicon substrate. An epitaxial silicon layer is then grown on the silicon substrate. Active areas, shallow trench isolation regions, and gate conductors are formed on/in the epitaxial silicon layer.

Abstract: Afin-type trench capacitor structure includes a buried plate diffused into a silicon substrate. The buried plate, which surrounds a bottle-shaped lower portion of the trench capacitor structure, is electrically connected to an upwardly extending annular poly electrode, thereby enabling the buried plate and the annular poly electrode to constitute a large-area capacitor electrode of the trench capacitor structure. A capacitor storage node consisting of a surrounding conductive layer, a central conductive layer and a collar conductive layer encompasses the upwardly extending annular poly electrode. A first capacitor dielectric layer isolates the capacitor storage node from the buried plate. A second capacitor dielectric layer and a third capacitor dielectric layer isolate the upwardly extending annular poly electrode from the capacitor storage node.

Abstract: A method for forming a deep trench capacitor mainly utilizes a liquid phase deposition (LPD) oxide to form a collar oxide layer in the trench, followed by forming a conductive layer serving as an upper electrode of the deep trench capacitor, thereby avoiding collar oxide residue in the conductive layer and thus forming good electrical connection. And, the method of the present invention does not need a dry etch to remove the unnecessary collar oxide layer such that the process can be simplified.

Abstract: Afin-type trench capacitor structure includes a buried plate diffused into a silicon substrate. The buried plate, which surrounds a bottle-shaped lower portion of the trench capacitor structure, is electrically connected to an upwardly extending annular poly electrode, thereby enabling the buried plate and the annular poly electrode to constitute a large-area capacitor electrode of the trench capacitor structure. A capacitor storage node consisting of a surrounding conductive layer, a central conductive layer and a collar conductive layer encompasses the upwardly extending annular poly electrode. A first capacitor dielectric layer isolates the capacitor storage node from the buried plate. A second capacitor dielectric layer and a third capacitor dielectric layer isolate the upwardly extending annular poly electrode from the capacitor storage node.

Abstract: A method for forming a deep trench capacitor mainly utilizes a liquid phase deposition (LPD) oxide to form a collar oxide layer in the trench, followed by forming a conductive layer serving as an upper electrode of the deep trench capacitor, thereby avoiding collar oxide residue in the conductive layer and thus forming good electrical connection. And, the method of the present invention does not need a dry etch to remove the unnecessary collar oxide layer such that the process can be simplified.