Patents by Inventor Sam Moon

Sam Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8837239
    Abstract: A latency control circuit includes a clock delay configured to output a plurality of serial delay signals obtained by serially delaying an input clock signal with the same intervals, a deviation information generating unit configured to generate a deviation information on the basis of a delay value, which the clock signal undergoes in a chip, and latency information, a clock selector configured to output a plurality of clock selection signals based on the plurality of serial delay signals and the deviation information, a command signal processing unit configured to generate a read signal based on an input command signal, and output a variable delay duplication signal by variably delaying the read signal, and a latency shifter configured to output a latency signal by combining the plurality of clock selection signals with the variable delay duplication signal.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: September 16, 2014
    Assignees: SK Hynix Inc., University of Seoul Industry Cooperation Foundation
    Inventors: Jong Gon Jung, Yong Sam Moon, Yong Ju Kim, Jong Ho Jung
  • Publication number: 20140010029
    Abstract: A latency control circuit includes a clock delay configured to output a plurality of serial delay signals obtained by serially delaying an input clock signal with the same intervals, a deviation information generating unit configured to generate a deviation information on the basis of a delay value, which the clock signal undergoes in a chip, and latency information, a clock selector configured to output a plurality of clock selection signals based on the plurality of serial delay signals and the deviation information, a command signal processing unit configured to generate a read signal based on an input command signal, and output a variable delay duplication signal by variably delaying the read signal, and a latency shifter configured to output a latency signal by combining the plurality of clock selection signals with the variable delay duplication signal.
    Type: Application
    Filed: March 12, 2013
    Publication date: January 9, 2014
    Inventors: Jong Gon JUNG, Yong Sam MOON, Yong Ju KIM, Jong Ho JUNG
  • Patent number: 8199589
    Abstract: Disclosed is a shift register including a plurality of flip-flops configured in series to shift input data in response to an applied clock, and a drive operation controller.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: June 12, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yong-Sam Moon
  • Patent number: 7871904
    Abstract: A wafer processing method for improving gettering capabilities of wafers made therefrom is presented. The method includes the steps of preparing, annealing and ion-implanting. The preparing step involves preparing the wafer from a silicon ingot. The annealing step involves forming first gettering sites in both sides of the wafer by annealing the wafer. The ion-implanting step involves forming second gettering sites in a back side of the wafer in which the first gettering sites are already formed.
    Type: Grant
    Filed: June 26, 2009
    Date of Patent: January 18, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jeong Hoon An, Byeong Sam Moon
  • Publication number: 20100214854
    Abstract: Disclosed is a shift register including a plurality of flip-flops configured in series to shift input data in response to an applied clock, and a drive operation controller.
    Type: Application
    Filed: February 16, 2010
    Publication date: August 26, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Yong-Sam MOON
  • Publication number: 20100009520
    Abstract: A wafer processing method for improving gettering capabilities of wafers made therefrom is presented. The method includes the steps of preparing, annealing and ion-implanting. The preparing step involves preparing the wafer from a silicon ingot. The annealing step involves forming first gettering sites in both sides of the wafer by annealing the wafer. The ion-implanting step involves forming second gettering sites in a back side of the wafer in which the first gettering sites are already formed.
    Type: Application
    Filed: June 26, 2009
    Publication date: January 14, 2010
    Inventors: Jeong Hoon AN, Byeong Sam MOON
  • Patent number: D897336
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: September 29, 2020
    Assignee: Wayne Fueling Systems LLC
    Inventors: John J. Morris, Scott R. Negley, III, Annika Birkler, Sam Moon, Randal S. Kretzler, Brian Tholen, Daniel Holmes, Artemus A. Shelton, Henry Fieglein, Paul Laiming, Lucas Wade
  • Patent number: D918272
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: May 4, 2021
    Assignee: Wayne Fueling Systems LLC
    Inventors: John Joseph Morris, Scott R. Negley, III, Annika Birkler, Sam Moon, Randal S. Kretzler, Brian Tholen, Daniel Holmes, Artemus A. Shelton, Henry Fieglein, Paul Laiming, Lucas Wade
  • Patent number: D942996
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: February 8, 2022
    Assignee: HOME RUN DUGOUT LLC
    Inventors: Nicholas S. Hermandorfer, Tyler L. Bambrick, Rodney D. Muras, Christy Sepulveda, Caroline Edwards, Sam Moon