Abstract: A condensed cyclic compound and an organic light-emitting device including the condensed cyclic compound are provided. The condensed cyclic compound is represented by Formula 1. The A3 ring of Formula 1 is a group represented by Formula 2A or a group represented by Formula 2B. The organic light-emitting device includes: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, the organic layer including at least one of the condensed cyclic compound represented by Formula 1.

Abstract: A device may be provided that includes: a display; a touch sensing unit which senses a touch at a particular position; a pressure sensing unit capable of sensing a magnitude of a pressure at the touched position; and a control unit. The control unit controls an operation of the device in accordance with an input of a user through the touch sensing unit and the pressure sensing unit, and controls the control amount of the device in accordance with a force and swipe gesture or swipe and force gesture. The control amount may be any one of sound volume, a magnification ratio of a current screen, zoom level of an image that is captured in a camera capture mode, a screen brightness, a vibration intensity, a camera focal length, a media play speed, and a scroll speed. According to the embodiment, the operability of the device is enhanced.

Abstract: Provided is an apparatus that can check in real time a process of removing light induced degradation using precise carrier injection through an AC power supply device (power unit). An apparatus for reduction of light induced degradation with carrier injection includes: a housing in which high-temperature heat treatment is performed on a solar battery cell; a heating unit that is formed in the housing, on which the solar battery cell is seated, and that heats the solar battery cell; a jig unit that is formed in the housing and fixes the solar battery cell to the heating unit by pressing the solar battery cell seated on the heating unit; an LED array unit that has a plurality of LED light sources and radiates light to the solar battery cell; and a driving unit that is coupled to the jig unit and the LED array unit and rotates the jig unit or the LED array unit.

Abstract: Provided is an apparatus that can check in real time a process of removing light induced degradation using precise carrier injection through an AC power supply device (power unit). An apparatus for reduction of light induced degradation with carrier injection includes: a housing in which high-temperature heat treatment is performed on a solar battery cell; a heating unit that is formed in the housing, on which the solar battery cell is seated, and that heats the solar battery cell; a jig unit that is formed in the housing and fixes the solar battery cell to the heating unit by pressing the solar battery cell seated on the heating unit; an LED array unit that has a plurality of LED light sources and radiates light to the solar battery cell; and a driving unit that is coupled to the jig unit and the LED array unit and rotates the jig unit or the LED array unit.

Abstract: A semiconductor memory device for reducing a data recovery time includes a cell block having a plurality of unit cells, each for storing a data; a command control block for receiving an activation control signal and a precharge command signal to thereby generate first and second control signals; an overdriving control block for generating a control pulse in response to the first control signal; a power supplier for selectively supplying one of a core voltage and a high voltage in response to the control pulse; and a sense amplifying block, which is enabled by the second control signal, for sensing and amplifying the data stored in the cell block by using one of the core voltage and the high voltage outputted from the power supplier, wherein an activation period of the second control signal is longer than that of the first control signal.

Abstract: The disclosure is a main row decoder of a semiconductor memory device including: a bank controller for generating an internal RAS signal in response to an active and precharge signal; a first pulse generator for generating a first pulse signal when the internal RAS signal transitions; a second pulse generator for generating a second pulse signal when the internal RAS signal or a self refresh signal transitions; an address latch circuit for latching the least significant bit of a row address in response to the first pulse signal; and a row pre-decoder for decoding outputs of the address latch circuit in response to the second pulse signal.

Abstract: A semiconductor memory device for reducing a data recovery time includes a cell block having a plurality of unit cells, each for storing a data; a command control block for receiving an activation control signal and a precharge command signal to thereby generate first and second control signals; an overdriving control block for generating a control pulse in response to the first control signal; a power supplier for selectively supplying one of a core voltage and a high voltage in response to the control pulse; and a sense amplifying block, which is enabled by the second control signal, for sensing and amplifying the data stored in the cell block by using one of the core voltage and the high voltage outputted from the power supplier, wherein an activation period of the second control signal is longer than that of the first control signal.

Abstract: An improved self burn-in circuit for a semiconductor memory generates a control signal, an address, and a test data for a burn-in test operation when a certain self burn-in test condition is satisfied. The burn-in circuit includes a burn-in detector for generating a control signal, an address signal, and a test data for a burn-in test operation when a self burn-in test condition is achieved. A memory array performs a burn-in test operation when the test data is written into and/or read from a memory cell which is selected by the address signal in accordance with the control signal.

Abstract: An improved internal voltage generating circuit for a semiconductor memory apparatus capable of enhancing reliability and stability of a burn-in operation by providing the BEN and the BEX which have a certain hysteresis characteristic and capable of previously compensating a possible internal source voltage drop by increasing the level of internal source voltage by supplying a constant current to an external voltage through a driving transistor when a sense amplifying circuit which consume more voltage starts operating, which includes a first reference voltage generator for generating a bias reference voltage; a voltage level detector for detecting an external voltage at the time of a burn-in operation by receiving the output of the first reference voltage generator; a second reference voltage generator for generating a reference voltage which is obtained by amplifying a voltage level by a certain ratio; a standby differential amplifier for comparing the reference voltage outputted from the second reference v

Abstract: A DRAM bit line selection circuit for selecting multiple pairs of bit lines connecting a bidirectional sense amplifier and a cell array having at least two blocks, the bit line selection circuit includes a block selecting circuit for receiving block selection coding signals corresponding to each block, generating a first signal corresponding to a selected block and a second signal corresponding to a non-selected block, and maintaining the first signal and the second signal until a non-selected block is selected; a level transition unit for outputting a transition signal having one of a first level and a second level in response to an output from the block selecting circuit; and a bit line selecting signal generating unit for generating a bit line selecting signal in response to the transition signal of the level transition unit, wherein the bit line selecting signal corresponding to the selected block maintains the first level, and changes to a third level when the non-selected block is selected.