Abstract: Tools and techniques for a semiconductor package providing side wall interconnections are provided. An apparatus includes two or more die layers that are bonded together, the first 3D stacked die package comprising a top surface, bottom surface, and one or more side walls. A first side wall of the one or more side walls includes two or more side wall pads, wherein each side wall pad of the two or more side wall pads is coupled to an interconnect of a respective die layer of the two or more die layers.

Abstract: Systems and methods are described for injecting chaos into an application based on a determination that network traffic will be at the application when the chaos is injected. In an example, a gateway can receive requests for applications in a system. The gateway can be configured to periodically insert a header into an application request that causes a proxy agent associated with the requested application to request chaos instructions from a server. When chaos instructions are requested, the server can determine whether and what kind of chaos to inject into the application. The server can send instructions to the proxy agent, which can inject chaos according to the instructions. A monitoring agent can then monitor traffic around the application to determine whether other applications and system components behave appropriately in response to the injected chaos.

Abstract: Tools and techniques for a semiconductor package providing side wall interconnections are provided. An apparatus includes two or more die layers that are bonded together, the first 3D stacked die package comprising a top surface, bottom surface, and one or more side walls. A first side wall of the one or more side walls includes two or more side wall pads, wherein each side wall pad of the two or more side wall pads is coupled to an interconnect of a respective die layer of the two or more die layers.

Abstract: Novel tools and techniques are provided for implementing mixed dielectric materials for improving signal integrity of integrated electronics packages or semiconductor packages. In various embodiments, a substrate for a semiconductor device includes: a first layer made of a first material; a second layer made of a second material; and a third layer disposed between the first and second layers, and that is made of a third material different from the first and second materials. In some cases, the first, second, and third layers each contains a plurality of gas-filled regions (e.g., but not limited to, an aerogel core of the third layer and/or polymer resin matrix embedded with hollow silica spheres or aerogel spheres of the first and second layers, or the like). Coaxial ground shields around signal lines in the substrate can be used to improve signal integrity. High dielectric constant lossy lines between signal lines can reduce crosstalk.

Abstract: A semiconductor package with integrated side wall antennas is provided. An apparatus includes two or more die layers that are bonded together, each of the two or more die layers comprising a top surface, bottom surface, and one or more side walls. A first side wall of the one or more side walls includes a first antenna array, the first antenna array comprising a first plurality of antenna array elements formed in at least one of the two or more die layers, wherein the first plurality of antenna array elements is at least partially exposed at the first side wall.

Abstract: It is described a interconnect array device (e.g., Ball Grid Array (BGA) device) comprising (a) a substrate having a substrate body and a main surface; (b) an array of solder connection elements formed at the main surface; and (c) a support structure formed at the main surface. The support structure is configured for maintaining, during a soldering process, a predefined spacing between the main surface of the substrate and a further main surface of a component carrier onto which the Ball Grid Array is mounted. The support structure comprises at least one support element. Further described is an electronic package with such a Ball Grid Array device and a method for manufacturing an electronic assembly comprising such an electronic package mounted on a component carrier.

Abstract: Novel tools and techniques are provided for implementing a semiconductor package or a chip package, and more particularly, for implementing a semiconductor package or a chip package including a core or a multilayer core having one or more variable width vias or one or more offset vias. In various embodiments, an apparatus includes a substrate. The substrate includes a core. The core may include one or more vias extending through the core. At least one via of the one or more vias includes a cross-section that varies along a length of the at least one via as the via extends through the core. The cross-section of the via may vary based on at least one of varying a width of the at least one via or offsetting a first portion of the at least one via from a second portion of the at least one via.

Abstract: Novel tools and techniques are provided for implementing a semiconductor package or a chip package, and more particularly methods, systems, and apparatuses are provided for implementing a semiconductor package or a chip package including a backside power distribution network. In various embodiments, an apparatus includes a first substrate comprising a device configured to receive a voltage and a first side located on a front side of the first substrate and a second side located on a back side of the first substrate, a second substrate, the second substrate configured to support the first substrate, and a power distribution network located at an interface between the second side of the first substrate and the second substrate.

Abstract: A method of provisioning virtual machines (VMs) includes: providing a VM pool that includes a graphics processing unit (GPU)-optimized VM and a non-GPU-optimized VM operating in different clouds. A control plane can receive an indication that a user has submitted a workload request, determine whether a GPU-optimized VM is available and instruct the non-GPU-optimized VM to send the workload to the GPU-optimized VM in a peer-to-peer manner. The GPU-optimized VM computes the workload and returns a result to the requesting VM. The control plane can instantiate a new GPU-optimized VM (or terminate it when the workload is complete) to dynamically maintain a desired number of available GPU-optimized VMs.

Abstract: Novel tools and techniques are provided for implementing cantilevered power planes to provide a return current path for high-speed signals. In various embodiments, a semiconductor package includes a substrate core, a plurality of layers, and an AC coupler(s). The plurality of layers includes power, ground, and signal layers each layer disposed on or above the substrate core, each signal layer being disposed between a power layer and a ground layer, the power layer and the ground layer each providing a return path for high frequency (e.g., 1 kHz or greater) signals carried by each signal layer. Each dielectric layer is disposed between and in contact with a pair of power, ground, or signal layer. The AC coupler(s) is coupled to each of a power layer(s) and a ground layer(s), without any portion of any power layer that is near an edge of the substrate core being anchored to the substrate core.

Abstract: Novel tools and techniques are provided for implementing cantilevered power planes to provide a return current path for high-speed signals. In various embodiments, a semiconductor package includes a substrate core, a plurality of layers, and an AC coupler(s). The plurality of layers includes power, ground, and signal layers each layer disposed on or above the substrate core, each signal layer being disposed between a power layer and a ground layer, the power layer and the ground layer each providing a return path for high frequency (e.g., 1 kHz or greater) signals carried by each signal layer. Each dielectric layer is disposed between and in contact with a pair of power, ground, or signal layer. The AC coupler(s) is coupled to each of a power layer(s) and a ground layer(s), without any portion of any power layer that is near an edge of the substrate core being anchored to the substrate core.

Abstract: Systems and methods are described for injecting chaos into an application based on a determination that network traffic will be at the application when the chaos is injected. In an example, a gateway can receive requests for applications in a system. The gateway can be configured to periodically insert a header into an application request that causes a proxy agent associated with the requested application to request chaos instructions from a server. When chaos instructions are requested, the server can determine whether and what kind of chaos to inject into the application. The server can send instructions to the proxy agent, which can inject chaos according to the instructions. A monitoring agent can then monitor traffic around the application to determine whether other applications and system components behave appropriately in response to the injected chaos.

Abstract: An apparatus includes a substrate that includes one or more routing layers, and an optical module coupled to the substrate. The optical module includes a photonic integrated circuit (PIC) and electronic integrated circuit (EIC), wherein the photonic integrated circuit is at least partially embedded within the substrate. The apparatus further includes a fiber optic coupler coupled to at least one of the substrate or PIC, wherein the PIC is configured to transmit or receive an optical signal via the fiber optic coupler.

Abstract: A substrate with differing dielectric constant materials is provided. The substrate includes a first ground plane, a second ground plane, a first conductive trace, a first material having a first dielectric constant, and a second material having a second dielectric constant. The first material is disposed between the first ground plane and the first conductive trace, and the second material is disposed between the second ground plane and at least part of the first conductive trace. The first dielectric constant is different from the second dielectric constant.

Abstract: A semiconductor device with a hybrid bonded interface having microfluidic channels is provided. The semiconductor device includes a first die comprising a first passivation layer, wherein the first passivation layer includes one or more first trenches, and a second die comprising a second passivation layer, wherein the second passivation layer includes one or more second trenches. The first die is bonded to the second die via hybrid copper-to-copper bonding, wherein the one or more first trenches and the one or more second trenches form one or more channels.

Abstract: An apparatus includes a substrate that includes one or more routing layers, and an optical module coupled to the substrate. The optical module includes a photonic integrated circuit (PIC) and electronic integrated circuit (EIC), wherein the photonic integrated circuit is at least partially embedded within the substrate. The apparatus further includes a fiber optic coupler coupled to at least one of the substrate or PIC, wherein the PIC is configured to transmit or receive an optical signal via the fiber optic coupler.

Abstract: Novel tools and techniques are provided for implementing a substrate with an elastomer layer. The substrate might include one or more interconnects and an elastomer layer comprising at least one conductor. In some instances, the at least one conductor of the elastomer layer couples to at least one of the one or more interconnects of the substrate. Additionally, the at least one conductor is configured to couple at least one of the one or more interconnects of the substrate to a circuit board.

Abstract: Novel tools and techniques are provided for implementing edge seal for bonded stacks of different size semiconductor devices. In various embodiments, a semiconductor device is provided that includes a composite structure and a sealant material. The composite structure includes two or more semiconductor devices that form a stacked configuration with one semiconductor device being disposed on or over each of one or more other semiconductor devices (of different size compared with that of the one semiconductor device) and with interface components of the one semiconductor device being bonded with corresponding interface components to each of the one or more other semiconductor devices in the stacked configuration. The sealant material is disposed along one or more surface portions of the composite structure to cover a region including at least portions of side surfaces of the composite structure that extend to cover at least each interface portion between stacked semiconductor devices.

Abstract: Tools and techniques for a semiconductor package providing side wall interconnections are provided. An apparatus includes two or more die layers that are bonded together, the first 3D stacked die package comprising a top surface, bottom surface, and one or more side walls. A first side wall of the one or more side walls includes two or more side wall pads, wherein each side wall pad of the two or more side wall pads is coupled to an interconnect of a respective die layer of the two or more die layers.

Abstract: A semiconductor package with integrated side wall antennas is provided. An apparatus includes two or more die layers that are bonded together, each of the two or more die layers comprising a top surface, bottom surface, and one or more side walls. A first side wall of the one or more side walls includes a first antenna array, the first antenna array comprising a first plurality of antenna array elements formed in at least one of the two or more die layers, wherein the first plurality of antenna array elements is at least partially exposed at the first side wall.