Patents by Inventor SAMANEH SADIGHI

SAMANEH SADIGHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DELAYED PULSING FOR PLASMA PROCESSING OF WAFERS
    Publication number: 20240047195
    Abstract: A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.
    Type: Application
    Filed: October 10, 2023
    Publication date: February 8, 2024
    Inventors: AKHIL MEHROTRA, VINAY SHANKAR VIDYARTHI, DAKSH AGARWAL, SAMANEH SADIGHI, JASON KENNEY, RAJINDER DHINDSA
  • Delayed pulsing for plasma processing of wafers
    Patent number: 11817312
    Abstract: A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: November 14, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Akhil Mehrotra, Vinay Shankar Vidyarthi, Daksh Agarwal, Samaneh Sadighi, Jason Kenney, Rajinder Dhindsa
  • DELAYED PULSING FOR PLASMA PROCESSING OF WAFERS
    Publication number: 20200135458
    Abstract: A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.
    Type: Application
    Filed: October 29, 2018
    Publication date: April 30, 2020
    Inventors: AKHIL MEHROTRA, VINAY SHANKAR VIDYARTHI, DAKSH AGARWAL, SAMANEH SADIGHI, JASON KENNEY, RAJINDER DHINDSA