Patents by Inventor Samarth Aggarwal

Samarth Aggarwal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HERBAL COMPOSITIONS AND METHODS OF TREATMENT USING THE SAME
    Publication number: 20230364175
    Abstract: An herbal composition including Lonicera Japonica and Andrographis Paniculata, a method of preparing the herbal composition, and a method of administering the herbal composition to a subject in need thereof is disclosed. The method of administering can include intranasal administration.
    Type: Application
    Filed: May 11, 2023
    Publication date: November 16, 2023
    Inventors: April Brader, Joel Snook, Yohann Samarasinghe, Samarth Aggarwal
  • Amorphous germanium waveguides for spectroscopic sensing and data communication applications
    Patent number: 11604147
    Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 ?m.
    Type: Grant
    Filed: November 9, 2021
    Date of Patent: March 14, 2023
    Assignee: Massachusetts Institute of Technology
    Inventors: Eveline Postelnicu, Samarth Aggarwal, Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, Michelle L. Clark, Anuradha M. Agarwal
  • AMORPHOUS GERMANIUM WAVEGUIDES FOR SPECTROSCOPIC SENSING AND DATA COMMUNICATION APPLICATIONS
    Publication number: 20220065793
    Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 ?m.
    Type: Application
    Filed: November 9, 2021
    Publication date: March 3, 2022
    Applicant: Massachusetts Institute of Technology
    Inventors: Eveline Postelnicu, Samarth Aggarwal, Kazumi WADA, Jurgen MICHEL, Lionel C. KIMERLING, Michelle L. Clark, Anuradha M. AGARWAL
  • INTENT-BASED COMMAND RECOMMENDATION GENERATION IN AN ANALYTICS SYSTEM
    Publication number: 20220019909
    Abstract: Methods, systems, and computer storage media for providing command recommendations for an analysis-goal, using analytics system operations in an analytics systems. In operation, an analytics client is configured to provide an analytics interface for receiving a selection of analysis-goal information that corresponds to an analysis-goal model. A goal engine selects an analysis-goal based on the analysis-goal information. A command engine is configured to use the analysis-goal and goal-driven models to predict probable commands for the analysis goal. The command engine also selects a next command recommendation from the probable commands. The command engine generates additional command recommendation data based on a loss function fine tuner. The additional command recommendation data can include a goal orientation score that quantifies a degree to which a command aligns with the analysis-goal.
    Type: Application
    Filed: July 14, 2020
    Publication date: January 20, 2022
    Inventors: Samarth Aggarwal, Rohin Garg, Bhanu Prakash Reddy Guda, Abhilasha Sancheti, Iftikhar Ahamath Burhanuddin
  • Amorphous germanium waveguides for spectroscopic sensing and data communication applications
    Patent number: 11204327
    Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 ?m.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: December 21, 2021
    Assignee: Massachusetts Institute of Technology
    Inventors: Eveline Postelnicu, Samarth Aggarwal, Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, Michelle L. Clark, Anuradha M. Agarwal
  • AMORPHOUS GERMANIUM WAVEGUIDES FOR SPECTROSCOPIC SENSING AND DATA COMMUNICATION APPLICATIONS
    Publication number: 20200158651
    Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 ?m.
    Type: Application
    Filed: November 21, 2019
    Publication date: May 21, 2020
    Inventors: Eveline Postelnicu, Samarth Aggarwal, Kazumi WADA, Jurgen MICHEL, Lionel C. KIMERLING, Michelle L. Clark, Anuradha M. AGARWAL