Abstract: A method is provided for repairing photolithographic exposure masks. A focused ion-beam exposure of the surface of the exposure mask is used to purposely “damage” this surface over the area where opaque or light-blocking material is required to be present.

Abstract: The present invention relates to a method for repairing a photomask by removing a residual defect in the photomask, the method including removing the defect area by gallium chelation with a water-soluble amine polymer.

Abstract: The present invention relates to a method for repairing a photomask by removing a residual defect in the photomask, the method including removing the defect area by gallium chelation with a water-soluble amine polymer.

Abstract: A new sequence and chemical composition for cleaning the surface of a halftone shift masks that use MoSiON as shifter material is provided. For purposes of repair or rework, the pellicle is removed from the mask so that the mask can be accessed. After the rework or repair has been completed, a new clean process is performed, for the new clean process the sequence of steps that is conventionally performed has been modified. After the new clean process has been completed, the pellicle is reinstalled over the surface of the mask.

Abstract: A new process for repairing an attenuated phase-shifting photomask is described. A contact hole pattern is provided on an attenuating phase-shifting photomask. An aerial image is obtained of the contact hole pattern. The critical dimension of the contact hole pattern is predicted from the intensity of the aerial image. Thereafter, the critical dimension is adjusted by forming non-printable optical proximity or scattering bar correction patterns around abnormal defects in the contact hole pattern on the attenuated phase-shifting photomask. The non-printable correction patterns enhance or cancel light intensity to correct the adnormal defects.

Abstract: In accordance with the objectives of the invention a new method is provided for repairing photolithographic exposure masks. The invention uses an etch function of a conventional mask repair tool. The invention addresses defects that occur in a pattern of opaque material (such as chrome) created over the surface of an exposure mask whereby an (undesired) opening exists in the opaque material. The invention uses a focused ion-beam exposure of the surface of the exposure mask to purposely “damage” this surface over the area where the opaque material is required to be present. Repair accuracy is in this manner easy to control, the conventional problem of peeling of the opaque or light sensitive material is eliminated.

Abstract: In accordance with the objectives of the invention a new method is provided for repairing photolithographic exposure masks. The invention uses an etch function of a conventional mask repair tool. The invention addresses defects that occur in a pattern of opaque material (such as chrome) created over the surface of an exposure mask whereby an (undesired) opening exists in the opaque material. The invention uses a focused E-beam exposure of the surface of the exposure mask to purposely “damage” this surface over the area where the opaque material is required to be present. Repair accuracy is in this manner easy to control, the conventional problem of peeling of the opaque or light sensitive material is eliminated.

Abstract: A process for the preparation of monohydrated sodium phenylpyruvate comprises reacting benzaldehyde with the stoichiometric quantity of hydantoin in the aqueous medium in the presence of a catalytic quantity of a primary or secondary amine at high temperature, treating the reaction mixture with an excess of sodium hydroxide at high temperature, adding sodium chloride to the sodium hydroxide-treated solution, acidifying the so obtained solution with concentrated hydrochloric acid, and washing the formed precipitate with methanol.