Abstract: Crystallographic orientations of ruthenium films and related methods are disclosed. Single crystal ruthenium films are provided with crystallographic orientations that arrange a c-axis of the ruthenium crystal structure in a direction that corresponds with a plane of the film or along a direction that corresponds with a surface of a substrate on which the film is formed. While ruthenium films typically form with the c-axis perpendicular to the surface of the substrate or as a polycrystalline film with a random crystallographic orientation, substrate surfaces may be configured with a crystallographic surface net that promotes non-perpendicular c-axis orientations of ruthenium. The substrate may be formed with a metal-terminated surface in certain arrangements. In this regard, ruthenium films may be configured as metallic interconnects for devices where directions of lowest electrical resistivity within the crystal structure are arranged to correspond with the direction of current flow in the devices.

Abstract: Crystallographic orientations of ruthenium films and related methods are disclosed. Single crystal ruthenium films are provided with crystallographic orientations that arrange a c-axis of the ruthenium crystal structure in a direction that corresponds with a plane of the film or along a direction that corresponds with a surface of a substrate on which the film is formed. While ruthenium films typically form with the c-axis perpendicular to the surface of the substrate or as a polycrystalline film with a random crystallographic orientation, substrate surfaces may be configured with a crystallographic surface net that promotes non-perpendicular c-axis orientations of ruthenium. The substrate may be formed with a metal-terminated surface in certain arrangements. In this regard, ruthenium films may be configured as metallic interconnects for devices where directions of lowest electrical resistivity within the crystal structure are arranged to correspond with the direction of current flow in the devices.