Abstract: Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.

Abstract: Discrete time compensation mechanisms include a channel component configured for determining which channel of a plurality of channels to process time slots of sampled data that are time stamped in a discrete time and processing the time slots of the sampled data to the plurality of channels. A common channel clock component is configured for time stamping the time slots of the sampled data in the discrete time domain that is faster than a non-discrete reference time stamp of continuous data from which the time slots are sampled from and for processing the sampled data through the plurality of channels faster than the continuous data is being received. Compensations for one or more gaps are generated based on a set of predetermined criteria and a corrected time stamp is applied to the sampled data for processing among different processing channels.

Abstract: Discrete time compensation mechanisms include a channel component configured for determining which channel of a plurality of channels to process time slots of sampled data that are time stamped in a discrete time and processing the time slots of the sampled data to the plurality of channels. A common channel clock component is configured for time stamping the time slots of the sampled data in the discrete time domain that is faster than a non-discrete reference time stamp of continuous data from which the time slots are sampled from and for processing the sampled data through the plurality of channels faster than the continuous data is being received. Compensations for one or more gaps are generated based on a set of predetermined criteria and a corrected time stamp is applied to the sampled data for processing among different processing channels.