Patents by Inventor Sameer P. Pendharker

Sameer P. Pendharker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7598547
    Abstract: We disclose the structure of a JFET device, the method of making the device and the operation of the device. The device is built near the top of a substrate. It has a buried layer that is electrically communicable to a drain terminal. It has a channel region over the buried layer contacting gate regions that connect to a gate terminal. The channel region, of which the length spans the distance between the buried layer and a source region, is connected to a source terminal. The device current flows in the channel substantially perpendicularly to the top surface of the substrate.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: October 6, 2009
    Assignee: Texas Instruments Incorporated
    Inventors: Sameer P Pendharker, Pinghai Hao, Xiaoju Wu
  • Patent number: 7164160
    Abstract: We disclose the structure of a JFET device, the method of making the device and the operation of the device. The device is built near the top of a substrate. It has a buried layer that is electrically communicable to a drain terminal. It has a channel region over the buried layer contacting gate regions that connect to a gate terminal. The channel region, of which the length spans the distance between the buried layer and a source region, is connected to a source terminal. The device current flows in the channel substantially perpendicularly to the top surface of the substrate.
    Type: Grant
    Filed: September 29, 2003
    Date of Patent: January 16, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Sameer P. Pendharker, Pinghai Hao, Xiaoju Wu