Abstract: An electrolyte composition can be capable of becoming molten when heated sufficiently. The electrolyte can include at least one lithium halide salt; and at least one lithium non-halide salt combined with the at least one lithium halide salt so as to form an electrolyte composition capable of becoming molten when above a melting point about 350° C. A lithium halide salt includes a halide selected from F and Cl. A first lithium non-halide salt can be selected from the group consisting of LiVO3, Li2SO4, LiNO3, and Li2MoO4. A thermal battery can include the electrolyte composition, such as in the cathode, anode, and/or separator region therebetween. The battery can discharge electricity by having the electrolyte composition at a temperature so as to be a molten electrolyte.

Abstract: The present disclosure provides a method of generating electricity from a long chain hydrocarbon, said method comprising contacting the liquid non-polar substrate with a plurality of enzymes, wherein at least one enzyme is non-electric current/potential enzyme that functions as a catalyst for chemical reaction transforming a first substrate or byproduct to a second substance that can be used with an additional electric current/potential generating enzyme.

Abstract: The present disclosure provides an aqueous based electrically conductive ink, which is essentially solvent free and includes a nano-scale conducting material; a binding agent; and an enzyme. In one embodiment, the ink includes at least one of a mediator, a cross-linking agent and a substrate as well. In one further embodiment, the present disclosure provides electrically conductive ink including a single walled, carboxylic acid functionalized carbon nanotube; 1-Ethyl-3-[3-dimethylaminopropyl]carbodiimide hydrochloride and N-hydroxy succinimide (NHS) ester; polyethyleneimine; an aqueous buffer; and glucose oxidase.

Abstract: The present disclosure provides an aqueous based electrically conductive ink, which is essentially solvent free and includes a nano-scale conducting material; a binding agent; and an enzyme. In one embodiment, the ink includes at least one of a mediator, a cross-linking agent and a substrate as well. In one further embodiment, the present disclosure provides electrically conductive ink including a single walled, carboxylic acid functionalized carbon nanotube; 1-Ethyl-3-[3-dimethylaminopropyl]carbodiimide hydrochloride and N-hydroxy succinimide (NHS) ester; polyethyleneimine; an aqueous buffer; and glucose oxidase.

Abstract: The present disclosure provides an electrode including an electrically conductive ink deposited thereon comprising: a nano-scale conducting material; a binding agent; and an enzyme; wherein said ink is essentially solvent free. In one embodiment, the ink includes at least one of a mediator, a cross-linking agent and a substrate as well. In one further embodiment, the electrode provided herein is used in a battery, fuel cell or sensor.

Abstract: The present disclosure provides an electrode including an electrically conductive ink deposited thereon comprising: a nano-scale conducting material; a binding agent; and an enzyme; wherein said ink is essentially solvent free. In one embodiment, the ink includes at least one of a mediator, a cross-linking agent and a substrate as well. In one further embodiment, the electrode provided herein is used in a battery, fuel cell or sensor.

Abstract: The present disclosure provides an aqueous based electrically conductive ink, which is essentially solvent free and includes a nano-scale conducting material; a binding agent; and an enzyme. In one embodiment, the ink includes at least one of a mediator, a cross-linking agent and a substrate as well. In one further embodiment, the present disclosure provides electrically conductive ink including a single walled, carboxylic acid functionalized carbon nanotube; 1-Ethyl-3-[3-dimethylaminopropyl]carbodiimide hydrochloride and N-hydroxy succinimide (NHS) ester; polyethyleneimine; an aqueous buffer; and glucose oxidase.

Abstract: A microfluidically-controlled transmission mode nanoscal surface plasmonics sensor device comprises one or more arrays of aligned nanochannels in fluid communication with inflowing and outflowing fluid handling manifolds that control the flow of fluid through the array(s). Fluid comprising a sample for analysis is moved from an inlet manifold, through the nanochannel array, and out through an exit manifold. The fluid may also contain a reagent used to modify the interior surfaces of the nanochannels, and/or a reagent required for the detection of an analyte.

Abstract: Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract: A microfluidically-controlled transmission mode nanoscal surface plasmonics sensor device comprises one or more arrays of aligned nanochannels in fluid communication with inflowing and outflowing fluid handling manifolds that control the flow of fluid through the array(s). Fluid comprising a sample for analysis is moved from an inlet manifold, through the nanochannel array, and out through an exit manifold. The fluid may also contain a reagent used to modify the interior surfaces of the nanochannels, and/or a reagent required for the detection of an analyte.

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract: Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract: Gallium nitride material structures, including devices, and methods associated with the same are provided. In some embodiments, the structures include one or more isolation regions which electrically isolate adjacent devices. One aspect of the invention is the discovery that the isolation regions also can significantly reduce the leakage current of devices (e.g., transistors) made from the structures, particularly devices that also include a passivating layer formed on a surface of the gallium nitride material. Lower leakage currents can result in increased power densities and operating voltages, amongst other advantages.