Abstract: A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying a piezo-electric effect in the barrier layer in a drift region between a gate and a drain, wherein a two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain, wherein the stress inducing layer comprises a material having a height that decreases linearly and monotonically in the drift region in the direction from the gate towards the drain, and wherein the 2DEG decreases in density in the drift region between the gate and the drain.

Abstract: A HEMT device comprising a III-Nitride material substrate, the surface of which follows a plane that is not parallel to the C-plane of the III-Nitride material; an epitaxial layer of III-Nitride material grown on said substrate; a recess etched in said epitaxial layer, having at least one plane wall parallel to a polar plane of the III-Nitride material; a carrier supply layer formed on a portion of the plane wall of the recess, such that a 2DEG region is formed along the portion of the plane wall of the recess; a doped source region formed at the surface of said epitaxial layer such that the doped source region is separated from said 2DEG region by a channel region of the epitaxial layer; a gate insulating layer formed on the channel region of the epitaxial layer; and a gate contact layer formed on the gate insulating layer.

Abstract: A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying a piezo-electric effect in the barrier layer in a drift region between a gate and a drain, wherein a two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain, wherein the stress inducing layer comprises a material having a height that decreases linearly and monotonically in the drift region in the direction from the gate towards the drain, and wherein the 2DEG decreases in density in the drift region between the gate and the drain.

Abstract: A HEMT device comprising a M-plane III-Nitride material substrate, a p-doped epitaxial layer of III-Nitride material grown on said substrate; a recess etched in said p-doped epitaxial layer, the recess having a plane wall parallel to a polar plane of the III-Nitride material; a carrier carrying layer formed on said plane wall of the recess; a carrier supply layer formed on said at least one carrier carrying layer, such that a 2DEG region is formed in the carrier carrying layer at the interface with the carrier supply layer along said plane wall of the recess; a doped source region formed at the surface of said p-doped epitaxial layer such that the doped source region is separated from said 2DEG region by a channel region; a gate insulating layer formed on the channel region; and a gate contact layer formed on the gate insulating layer.

Abstract: A HEMT device comprising a M-plane III-Nitride material substrate, a p-doped epitaxial layer of III-Nitride material grown on said substrate; a recess etched in said p-doped epitaxial layer, the recess having a plane wall parallel to a polar plane of the III-Nitride material; a carrier carrying layer formed on said plane wall of the recess; a carrier supply layer formed on said at least one carrier carrying layer, such that a 2DEG region is formed in the carrier carrying layer at the interface with the carrier supply layer along said plane wall of the recess; a doped source region formed at the surface of said p-doped epitaxial layer such that the doped source region is separated from said 2DEG region by a channel region; a gate insulating layer formed on the channel region; and a gate contact layer formed on the gate insulating layer.

Abstract: A HEMT device comprising a III-Nitride material substrate, the surface of which follows a plane that is not parallel to the C-plane of the III-Nitride material; an epitaxial layer of III-Nitride material grown on said substrate; a recess etched in said epitaxial layer, having at least one plane wall parallel to a polar plane of the III-Nitride material; a carrier supply layer formed on a portion of the plane wall of the recess, such that a 2DEG region is formed along the portion of the plane wall of the recess; a doped source region formed at the surface of said epitaxial layer such that the doped source region is separated from said 2DEG region by a channel region of the epitaxial layer; a gate insulating layer formed on the channel region of the epitaxial layer; and a gate contact layer formed on the gate insulating layer.

Abstract: A HEMT device comprising a III-Nitride material substrate, the surface of which follows a plane that is not parallel to the C-plane of the III-Nitride material; an epitaxial layer of III-Nitride material grown on said substrate; a recess etched in said epitaxial layer, having at least one plane wall parallel to a polar plane of the III-Nitride material; a carrier supply layer formed on a portion of the plane wall of the recess, such that a 2DEG region is formed along the portion of the plane wall of the recess; a doped source region formed at the surface of said epitaxial layer such that the doped source region is separated from said 2DEG region by a channel region of the epitaxial layer; a gate insulating layer formed on the channel region of the epitaxial layer; and a gate contact layer formed on the gate insulating layer.

Abstract: A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.

Abstract: A half bridge circuit including an isolation substrate, a metal layer on one surface of the isolation substrate, a power loop substrate on the metal layer, an upper switch on the power loop substrate, a lower switch on the power loop substrate and coupled to the upper switch, a capacitor on the power loop substrate and coupled to the upper switch, a first via through the power loop substrate and coupled between the lower switch and the metal layer, and a second via through the power loop substrate and coupled between the capacitor and the metal layer, wherein the power loop substrate has a height and separates the metal layer from the upper switch, lower switch and capacitor by the height.

Abstract: A half bridge circuit including an isolation substrate, a metal layer on one surface of the isolation substrate, a power loop substrate on the metal layer, an upper switch on the power loop substrate, a lower switch on the power loop substrate and coupled to the upper switch, a capacitor on the power loop substrate and coupled to the upper switch, a first via through the power loop substrate and coupled between the lower switch and the metal layer, and a second via through the power loop substrate and coupled between the capacitor and the metal layer, wherein the power loop substrate has a height and separates the metal layer from the upper switch, lower switch and capacitor by the height.

Abstract: A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.

Abstract: A HEMT device has a substrate; a buffer layer disposed above the substrate; a carrier supplying layer disposed above the buffer layer; a gate element penetrating the carrier supplying layer; and a drain element disposed on the carrier supplying layer. The carrier supplying layer has a non-uniform thickness between the gate element and the drain element, the carrier supplying layer having a relatively greater thickness adjacent the drain element and a relatively thinner thickness adjacent the gate element. A non-uniform two-dimensional electron gas conduction channel is formed in the carrier supplying layer, the two-dimensional electron gas conduction channel having a non-uniform profile between the gate and drain elements.

Abstract: A HEMT device comprising a III-Nitride material substrate, the surface of which follows a plane that is not parallel to the C-plane of the III-Nitride material; an epitaxial layer of III-Nitride material grown on said substrate; a recess etched in said epitaxial layer, having at least one plane wall parallel to a polar plane of the III-Nitride material; a carrier supply layer formed on a portion of the plane wall of the recess, such that a 2DEG region is formed along the portion of the plane wall of the recess; a doped source region formed at the surface of said epitaxial layer such that the doped source region is separated from said 2DEG region by a channel region of the epitaxial layer; a gate insulating layer formed on the channel region of the epitaxial layer; and a gate contact layer formed on the gate insulating layer.

Abstract: A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.

Abstract: A HEMT device has a substrate; a buffer layer disposed above the substrate; a carrier supplying layer disposed above the buffer layer; a gate element penetrating the carrier supplying layer; and a drain element disposed on the carrier supplying layer. The carrier supplying layer has a non-uniform thickness between the gate element and the drain element, the carrier supplying layer having a relatively greater thickness adjacent the drain element and a relatively thinner thickness adjacent the gate element. A non-uniform two-dimensional electron gas conduction channel is formed in the carrier supplying layer, the two-dimensional electron gas conduction channel having a non-uniform profile between the gate and drain elements.

Abstract: A HEMT device has a substrate; a buffer layer disposed above the substrate; a carrier supplying layer disposed above the buffer layer; a gate element penetrating the carrier supplying layer; and a drain element disposed on the carrier supplying layer. The carrier supplying layer has a non-uniform thickness between the gate element and the drain element, the carrier supplying layer having a relatively greater thickness adjacent the drain element and a relatively thinner thickness adjacent the gate element. A non-uniform two-dimensional electron gas conduction channel is formed in the carrier supplying layer, the two-dimensional electron gas conduction channel having a non-uniform profile between the gate and drain elements.