Abstract: A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.

Abstract: A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.

Abstract: A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.

Abstract: A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.

Abstract: A lateral DMOS transistor that includes two RESURF regions of one conductivity and two RESURF regions of another conductivity disposed between the base region and the drain region thereof.

Abstract: A lateral DMOS transistor that includes two RESURF regions of one conductivity and two RESURF regions of another conductivity disposed between the base region and the drain region thereof.

Abstract: A lateral double diffused MOSFET (LDMOST) incorporates both the reduced surface field (RESURF) and super junction (SJ) in a split-drift region to significantly improve the on-state, off-state and switching characteristics in junction-isolated (JI) technology. The structure effectively suppresses substrate-assisted-depletion which is the main problem encountered when applying the SJ concept to lateral power devices. The device structure features a split-drift region formed of two parts: a SJ structure that extends over most of the drift region, and a terminating RESURF region occupying a portion of the drift region next to the drain. The structure offers improved breakdown voltage and reduced specific on resistance as compared to convention structures, and is useful in power integrated circuits suitable for a variety of applications including flat plasma panel display, automotive electronics, motor control, power supply and high voltage lamp ballasts.

Abstract: A SJ-LDMOST device offers significantly improved on-state, off-state, and switching characteristics of lateral power devices for power integrated circuits applications. The device is fabricated on an insulator substrate. The proposed structure achieves charge compensation in the drift region by terminating the bottom of the SJ structure by a dielectric hence eliminating the undesirable vertical electric field component and preventing any substrate-assisted-depletion. The device structural arrangement thereby achieve a uniform distribution of the electric field thus maximizing the BV for a given drift region length.

Abstract: A SJ-LDMOST device offers significantly improved on-state, off-state, and switching characteristics of lateral power devices for power integrated circuits applications. The device is fabricated on an insulator substrate. The proposed structure achieves charge compensation in the drift region by terminating the bottom of the SJ structure by a dielectric hence eliminating the undesirable vertical electric field component and preventing any substrate-assisted-depletion. The device structural arrangement thereby achieve a uniform distribution of the electric field thus maximizing the BV for a given drift region length.