Patents by Inventor Sameh Khalil

Sameh Khalil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
    Patent number: 10192986
    Abstract: A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.
    Type: Grant
    Filed: January 25, 2016
    Date of Patent: January 29, 2019
    Assignee: HRL Laboratories, LLC
    Inventors: Sameh Khalil, Karim S. Boutros, Keisuke Shinohara
  • CONTROLLING LATERAL TWO-DIMENSIONAL ELECTRON HOLE GAS HEMT IN TYPE III NITRIDE DEVICES USING ION IMPLANTATION THROUGH GRAY SCALE MASK
    Publication number: 20140051221
    Abstract: A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
    Type: Application
    Filed: October 25, 2013
    Publication date: February 20, 2014
    Applicant: HRL LABORATORIES, LLC
    Inventors: Sameh Khalil, Karim S. Boutros
  • A NON-UNIFORM LATERAL PROFILE OF TWO-DIMENSIONAL ELECTRON GAS CHARGE DENSITY IN TYPE III NITRIDE HEMT DEVICES USING ION IMPLANTATION THROUGH GRAY SCALE MASK
    Publication number: 20130313611
    Abstract: A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
    Type: Application
    Filed: May 23, 2012
    Publication date: November 28, 2013
    Applicant: HRL LABORATORIES, LLC
    Inventors: Sameh KHALIL, Karim S. BOUTROS
  • HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON GAS PROFILE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20130313612
    Abstract: A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.
    Type: Application
    Filed: May 23, 2012
    Publication date: November 28, 2013
    Applicant: HRL LABORATORIES, LLC
    Inventors: Sameh Khalil, Karim S. Boutros, Keisuke Shinohara
  • Multiple lateral RESURF LDMOST
    Patent number: 8106451
    Abstract: A lateral DMOS transistor that includes two RESURF regions of one conductivity and two RESURF regions of another conductivity disposed between the base region and the drain region thereof.
    Type: Grant
    Filed: August 2, 2007
    Date of Patent: January 31, 2012
    Assignee: International Rectifier Corporation
    Inventor: Sameh Khalil
  • Multiple lateral RESURF LDMOST
    Publication number: 20080029814
    Abstract: A lateral DMOS transistor that includes two RESURF regions of one conductivity and two RESURF regions of another conductivity disposed between the base region and the drain region thereof.
    Type: Application
    Filed: August 2, 2007
    Publication date: February 7, 2008
    Inventor: Sameh Khalil