Abstract: A circuit arrangement includes a transceiver unit, a switching device coupled to the transceiver unit with a terminal and a control device coupled to the switching device. The control device is configured to operate in a first and in a second mode of operation. In the first mode of operation, the switching device is configured by the control device such that a first signal is routed from the transceiver unit via the switching device back to the transceiver unit in a feedback loop. In the second mode of operation, the switching device is configured by the control device such that a second signal is routed from the transceiver unit via the switching device to the terminal or the second signal is routed from the terminal via the switching device to the transceiver unit.

Abstract: A circuit arrangement includes a transceiver unit, a switching device coupled to the transceiver unit with a terminal and a control device coupled to the switching device. The control device is configured to operate in a first and in a second mode of operation. In the first mode of operation, the switching device is configured by the control device such that a first signal is routed from the transceiver unit via the switching device back to the transceiver unit in a feedback loop. In the second mode of operation, the switching device is configured by the control device such that a second signal is routed from the transceiver unit via the switching device to the terminal or the second signal is routed from the terminal via the switching device to the transceiver.

Abstract: An RF power amplifier module can be used without a matching device between the power amplifier module and an antenna. The power amplifier module is constructed and operated to detect, protect and maintain the performance of the power amplifier in the presence of severe VSWR load mismatches, without requiring the use of external circuitry. The RF power amplifier module includes integral detection circuitry for generating a first detection signal having a value that is indicative of the current flowing through an output power transistor and a second detection signal having a value that is indicative the voltage appearing at the output of the output power transistor, as well as integral compensation circuitry for controlling the generation of a plurality of bias current and bias voltage signals to have values that are a function of the values of the first and second detection signals, as well as the current output power level of the RF power amplifier module.

Abstract: An RF power amplifier module can be used without a matching device between the power amplifier module and an antenna. The power amplifier module is constructed and operated to detect, protect and maintain the performance of the power amplifier in the presence of severe VSWR load mismatches, without requiring the use of external circuitry. The RF power amplifier module includes integral detection circuitry for generating a first detection signal having a value that is indicative of the current flowing through an output power transistor and a second detection signal having a value that is indicative the voltage appearing at the output of the output power transistor, as well as integral compensation circuitry for controlling the generation of a plurality of bias current and bias voltage signals to have values that are a function of the values of the first and second detection signals, as well as the current output power level of the RF power amplifier module.

Abstract: A predistortion linearizer circuit comprising an amplitude distorting part (AM/AM) and a phase distorting part (AM/PM). At least the phase distorting part (AM/PM) comprises broadband biasing means (51) and a non-linear transmission line (L51/D51 to L55/D55) responsive to them. The biasing means (51) are arranged to bias the non-linear transmission line (L51/D51 to L55/D55) to a substantially phase distorting area. The characteristics of the circuit can be changed by adjusting a biasing voltage (VB1) or by switching some of the diodes (D54, D55) inactive by activation signals (VA1, VA2). The amplitude distorting part (AM/AM) and the phase distorting part (AM/PM) can be similar in structure, but the diodes (D51 to D55) are partly forward-biased, whereby the losses caused by them decrease the amplitude of the signal.