Patents by Inventor Samiran Dasgupta

Samiran Dasgupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230137735
    Abstract: An aspect of the disclosure relates to a method of reducing a third-order intermodulation component at a first terminal of a transistor, including: receiving an input radio frequency (RF) signal cycling with a first frequency at a control terminal of the transistor; generating a feedback RF signal cycling at a second frequency at a second terminal of the transistor, wherein the second frequency is substantially twice the first frequency; and generating a third-order intermodulation cancellation component at the first terminal including combining the input RF signal with the feedback RF signal, wherein the third-order intermodulation cancellation component has a magnitude and phase substantially equal to and opposite a magnitude and phase of the third-order intermodulation component at the first terminal of the transistor, respectively.
    Type: Application
    Filed: October 24, 2022
    Publication date: May 4, 2023
    Inventors: Madhukar VALLABHANENI, Girish KOPPASSERY, Mehmet UZUNKOL, Amjath HUSAIN, Abhay Shankar GAIKWAD, Rishab MAHESHWARI, Samiran DASGUPTA
  • Publication number: 20230129287
    Abstract: An amplifier circuit includes an amplifier core having a cascode transistor and a gain transistor, a bias circuit coupled to the amplifier core, the bias circuit comprising: a first current source, a second current source, an operational transconductance amplifier (OTA), a bias cascode transistor pair having a bias cascode transistor and a bias gain transistor, and a replica circuit coupled to the first current source and to the second current source.
    Type: Application
    Filed: October 24, 2022
    Publication date: April 27, 2023
    Inventors: Girish KOPPASSERY, Amjath HUSAIN, Abhay Shankar GAIKWAD, Samiran DASGUPTA, Madhukar VALLABHANENI
  • Patent number: 9054695
    Abstract: An IO circuit capable of high voltage signaling in a low voltage BiCMOS process. The IO circuit includes a voltage rail generator circuit that receives a reference voltage and generates a voltage rail supply. A BJT (bi-polar junction transistor) buffer circuit is coupled to the voltage rail generator circuit and a pad. The BJT buffer circuit includes a pull-up circuit and a pull-down circuit. The pull-up circuit receives the voltage rail supply. The pull-down circuit is coupled to the pull-up circuit. The pad is coupled to the pull-up circuit and the pull-down circuit.
    Type: Grant
    Filed: October 1, 2013
    Date of Patent: June 9, 2015
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Samiran Dasgupta, Devraj Matharampallil Rajagopal
  • Publication number: 20150091616
    Abstract: An IO circuit capable of high voltage signaling in a low voltage BiCMOS process. The IO circuit includes a voltage rail generator circuit that receives a reference voltage and generates a voltage rail supply. A BJT (bi-polar junction transistor) buffer circuit is coupled to the voltage rail generator circuit and a pad. The BJT buffer circuit includes a pull-up circuit and a pull-down circuit. The pull-up circuit receives the voltage rail supply. The pull-down circuit is coupled to the pull-up circuit. The pad is coupled to the pull-up circuit and the pull-down circuit.
    Type: Application
    Filed: October 1, 2013
    Publication date: April 2, 2015
    Applicant: Texas Instruments Incorporated
    Inventors: Samiran Dasgupta, Devraj Matharampallil Rajagopal