Abstract: A vertical semiconductor device includes; a pattern structure including a plurality of insulation patterns and a plurality of gate electrodes that are alternately and repeatedly stacked on a substrate, wherein the pattern structure includes a first gate electrode serving as a gate electrode of an erase transistor, wherein the first gate electrode is one of the plurality of gate electrodes; and a channel structure in a channel hole passing through the pattern structure, wherein the channel structure includes a data storage structure, a first channel, an undoped semiconductor liner, a doped semiconductor pattern, a filling insulation pattern and a capping pattern, wherein the data storage structure, the first channel, the undoped semiconductor liner, and the doped semiconductor pattern are sequentially disposed on a sidewall of the first gate electrode.

Abstract: A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.

Abstract: A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.

Abstract: The present disclosure relates to semiconductor devices, in which a semiconductor device includes: a plate layer, gate electrodes stacked and spaced apart from each other on the plate layer in a first direction, the gate electrodes including first gate electrodes and second gate electrodes on the first gate electrodes; a horizontal insulating layer between the first gate electrodes and the second gate electrode; first channel structures extending through the first gate electrodes in the first direction; second channel structures extending through the second gate electrodes in the first direction and electrically connected to the first channel structures, respectively; contact plugs extending through the horizontal insulating layer in the first direction and connected to the gate electrodes, respectively; dummy vertical structures extending through the horizontal insulating layer in the first direction and around the contact plugs, and a cell region insulating layer covering upper surfaces of the dummy vertica

Abstract: Provided is a semiconductor device including a semiconductor substrate, a gate stack including a plurality of gate layers and a plurality of insulation layers alternately stacked on the semiconductor substrate, a plurality of first channel structures penetrating through the gate stack and extending in a vertical direction, a word line cut penetrating through the gate stack and extending in the vertical direction, a passivation layer disposed on the gate stack, and a string select line stack disposed on the passivation layer, wherein the passivation layer includes a first passivation layer containing a passivation element and a second passivation layer having a smaller content of the passivation element than the first passivation layer.

Abstract: A non-volatile memory device may include a substrate having a cell region and a connection region, an electrode structure including electrodes stacked on the substrate and an insulating pattern covering an uppermost electrode among the electrodes, a vertical structure connected with the substrate through the electrode structure in the cell region, a filling insulating layer covering the electrode structure in the connection region, a buffer insulating layer on a cover insulating layer, a conductive pattern, and an upper semiconductor pattern connected with the conductive pattern through the buffer insulating layer. The cover insulating layer may cover the electrode structure, the vertical structure, and the filling insulating layer, and may include a through hole in the cell region and at least one through opening in the connection region. The conductive pattern may have at least a portion in the through hole, and may be connected with the vertical structure.

Abstract: A vertical semiconductor device includes; a pattern structure including a plurality of insulation patterns and a plurality of gate electrodes that are alternately and repeatedly stacked on a substrate, wherein the pattern structure includes a first gate electrode serving as a gate electrode of an erase transistor, wherein the first gate electrode is one of the plurality of gate electrodes; and a channel structure in a channel hole passing through the pattern structure, wherein the channel structure includes a data storage structure, a first channel, an undoped semiconductor liner, a doped semiconductor pattern, a filling insulation pattern and a capping pattern, wherein the data storage structure, the first channel, the undoped semiconductor liner, and the doped semiconductor pattern are sequentially disposed on a sidewall of the first gate electrode.

Abstract: A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.