Abstract: Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively removing a first region of a silicon material between source/drain regions of a semiconductor substrate to expose a first region of oxide material. The methods may include forming a liner over the first region of oxide material and contacting second regions of the silicon material proximate the source/drain regions of the semiconductor substrate. The methods may also include selectively removing the second regions of the silicon material proximate the source/drain regions of the semiconductor substrate to expose a second region of the oxide material. The methods may further include selectively removing the second region of the oxide material from a surface of a contact in the semiconductor structure.

Abstract: Processing methods may be performed to form a sidewall spacer on a semiconductor substrate. The methods may include laterally etching a first silicon-containing material relative to a second silicon-containing material. The first silicon-containing material and the second silicon-containing material may be disposed vertically from one another. The first silicon-containing material may also be positioned vertically between two regions of the second silicon-containing material. The methods may also include forming a spacer within a recess defined by the lateral etching between the two regions of the second silicon-containing material. The methods may further include forming a contact material adjacent to and contacting both the second silicon-containing material and the spacer.