Abstract: A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions.

Abstract: A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions.

Abstract: A process for preparing a single source solid precursor matrix for semiconductor nanocrystals having the steps of: mixing 0.1-1 Molar of an aqueous/non-aqueous (organic) solution containing the first component of the host matrix with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state, dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution, addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state, addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material, addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture, and heating the mixture to obtain a solid layered micro-structural precursor compound.

Abstract: A process for preparing a single source solid precursor matrix for semiconductor nanocrystals having the steps of: mixing 0.1-1 Molar of an aqueous/non-aqueous (organic) solution containing the first component of the host matrix with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state, dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution, addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state, addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material, addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture, and heating the mixture to obtain a solid layered micro-structural precursor compound.