Abstract: In one aspect, a method of manufacturing a magnetoresistance (MR) element having layers include ramping up a temperature of a reference layer of the MR element to an annealing temperature of the reference layer by increasing an amplitude of laser pulses applied to the reference layer over time to an amplitude that corresponds to the annealing temperature of the reference layer; applying a magnetic field to the reference layer; and maintaining the amplitude of subsequent laser pulses over time that have the amplitude that corresponds to the annealing temperature of the reference layer until at least the reference layer is annealed.

Abstract: In one aspect, a sensor includes a first metal layer portion and a second metal layer portion separated by an insulator material; a conductive material layer in electrical contact with the first metal layer portion and the second metal layer portion; and a tunnel magnetoresistance (TMR) element positioned on and in electrical contact with the conductive material layer. A first current is configured to flow from the first metal layer portion, through the conductive material layer, to the second metal layer portion, and a second current is configured to flow from the first metal layer portion, through the conductive material layer, through the TMR element, and exiting through a top of the TMR element.

Abstract: In one aspect, a method includes depositing magnetoresistance (MR) layers of a MR element on a semiconductor structure; depositing a first hard mask on the MR layers; depositing and patterning a first photoresist on the first hard mask using photolithography to expose portions of the first hard mask; etching the exposed portions of the first hard mask; etching a portion of the MR layers using the first hard mask; depositing a second hard mask on a first capping layer; depositing and patterning a second photoresist on the second hard mask using photolithography to expose portions of the second hard mask; etching the exposed portions of the second hard mask; etching the MR element using the second hard mask; etching portions of the first hard mask down to a top MR layer of the MR element; and depositing a conducting material on the top MR layer to form an electroconductive contact.

Abstract: Methods and apparatus for a magnetoresistive (MR) sensor a free layer with a thickness of the CoFeB material to produce out-of-plane sensing for the sensor and a reference layer magnetically coupled to the free layer. A dusting layer of an oxide material is disposed on the free layer to achieve perpendicular magnetic anisotropy for an interface of the oxide layer and the free layer for a desired sensitivity for the sensor.

Abstract: Methods and apparatus for a magnetoresistive (MR) sensor including a seed layer having a CoFe layer for canceling hysteresis in the MR sensor. The MR stackup can include a free layer and a reference layer. The seed layer having CoFe provides a desired texturing of the stackup to cancel hysteresis effects.