Abstract: A system of soil carbon measurement is provided. The system includes a multimodal sensor payload that includes multiple sensors that are each a different sensor type and that are configured to estimate quantities of carbon stored in a soil area. The sensors include multiple stand-off sensor technologies.

Abstract: A system to perform multi-stage cleaning of material from a space suit worn by an astronaut in a deep space environment includes one or more discharge units installed external to an interior volume of a facility in the deep space environment. Each of the one or more discharge units releases one or more substances. The one or more substances includes water or air and the interior volume of the facility is defined by an interior hatch that is separated from an exterior hatch leading to the deep space environment by an airlock. One or more collection units installed external to the interior volume. Each collection unit traps released material that is released from a space suit based on the multi-stage cleaning to prevent the released material from entering the interior volume.

Abstract: A semiconductor device includes a semiconductor layer with opposing first and second main surfaces and a first column extending from the first main surface and having a first concentration of a dopant of the first conductivity type. A trench with a sidewall and bottom extends at least partially through the semiconductor layer from the first main surface. A second column between the trench sidewall and the first column has a second concentration of a dopant of a second conductivity type and is formed in the semiconductor layer and extends from the first main surface. A trench oxide layer is in contact with at least the trench sidewall and the trench bottom. A trench nitride layer covers the trench oxide layer at least on the trench sidewall. A dielectric seal material seals the trench proximate the first main surface of the semiconductor layer such that the trench is air-tight.

Abstract: Electrolyte formulations for energy storage devices are disclosed. The energy storage device comprises a first electrode and a second electrode, where one or both of the first electrode and the second electrode is a Si-based electrode, a separator between the first electrode and the second electrode, and an electrolyte composition. Electrolyte formulations as described herein are electrolyte compositions comprising two or more components such as solvents, co-solvents, salts and/or additives. In some embodiments, three or more, four or more, five or more, six or more, seven or more, or eight or more components are included in the electrolyte composition.

Abstract: A high voltage superjunction MOSFET includes a semiconductor substrate and a semiconductor layer having columns of first and second conductivity. A buffer layer of the first conductivity is between the semiconductor substrate and semiconductor layer. A plug region of the second conductivity is formed at a semiconductor layer surface and extends to the columns. A source/drain region is formed at the semiconductor layer surface and is connected to the plug region. The source/drain region has a concentration of the first conductivity between about 1×1019 cm?3 and 1.5×1020 cm?3. A body region of the second conductivity is between the source/drain region and the first column and is connected to the plug region. A gate trench is formed in the semiconductor layer surface and extends toward the first column and has a trench gate electrode disposed therein. A dielectric layer separates the trench gate electrode from the first column.

Abstract: A thermoelectric power generation system includes a solar panel array on a first side of a tower to absorb solar radiation and generate electrical energy and waste heat and a panel on a second side, opposite the first side, of the tower. A plurality of thermoelectric elements of the tower are interposed between the solar panel array and the panel. The plurality of thermoelectric elements converts conductive heat flow of the waste heat from the solar panel directed toward the panel to electrical energy. A conductive base supports the tower and to conduct heat away from the panel.

Abstract: A high voltage superjunction MOSFET includes a semiconductor substrate and a semiconductor layer having columns of first and second conductivity. A buffer layer of the first conductivity is between the semiconductor substrate and semiconductor layer. A plug region of the second conductivity is formed at a semiconductor layer surface and extends to the columns. A source/drain region is formed at the semiconductor layer surface and is connected to the plug region. The source/drain region has a concentration of the first conductivity between about 1×1019 cm?3 and 1.5×1020 cm?3. A body region of the second conductivity is between the source/drain region and the first column and is connected to the plug region. A gate trench is formed in the semiconductor layer surface and extends toward the first column and has a trench gate electrode disposed therein. A dielectric layer separates the trench gate electrode from the first column.

Abstract: An airlock for an extraplanetary environment includes an enclosed volume, an interior hatch separating the enclosed volume from a pressurized space, and an exterior hatch separating the enclosed volume from an external environment. The enclosed volume is selectably variable to reduce a mass of resources, lost into the external environment from the enclosed volume. A method of assembling an airlock for an extraplanetary environment includes defining an enclosed volume, positioning an interior hatch at the enclosed volume separating the enclosed volume from a pressurized space, and positioning an exterior hatch at the enclosed volume separating the enclosed volume from an external environment. The enclosed volume is selectably variable to reduce a mass of resources lost into the external environment from the enclosed volume.

Abstract: An equipment cleaning apparatus for an extraplanetary environment includes a cleaner vessel positioned at an exterior of an extraplanetary habitat, and an exterior hatch located outside of the extraplanetary habitat and allowing access to an interior of the cleaner vessel. The cleaning apparatus is operable in one or more cleaning cycles to clean equipment located in the cleaner vessel. A method of cleaning equipment in an extraplanetary environment includes providing a cleaner vessel at an extraplanetary habitat, placing one or more articles of equipment into an interior of the cleaner vessel through an exterior hatch located outside of the extraplanetary habitat, closing the exterior hatch, and operating one or more cleaning cycles on the equipment in the cleaner vessel.

Abstract: An environmental control system for a space vehicle includes an oxygen supply, a nitrogen supply, a first pressure control panel having a first oxygen control board configured to receive an oxygen gas from the oxygen supply and a first nitrogen control board configured to receive a nitrogen gas from the nitrogen supply, and a supervisory controller configured to control the first pressure control panel and thereby to adjust a partial pressure of oxygen and an ambient pressure of an oxygen/nitrogen gas mixture within a first module.

Abstract: A thermoelectric power generation system includes a solar panel array on a first side of a tower to absorb solar radiation and generate electrical energy and waste heat and a panel on a second side, opposite the first side, of the tower. A plurality of thermoelectric elements of the tower are interposed between the solar panel array and the panel. The plurality of thermoelectric elements converts conductive heat flow of the waste heat from the solar panel directed toward the panel to electrical energy. A conductive base supports the tower and to conduct heat away from the panel.

Abstract: A sublimation generator including a sublimation tank configured to receive ice including at least carbon dioxide. The sublimation generator also includes a first heat exchanger in thermal communication with the sublimation tank. The first heat exchanger being configured to expel heat from a coolant into the sublimation tank to sublimate the carbon dioxide into a gaseous state. The sublimation generator also includes a gas turbine generator fluidly connected to the sublimation tank and configured to receive the carbon dioxide in the gaseous state.

Abstract: A semiconductor device includes a semiconductor layer with opposing first and second main surfaces and a first column extending from the first main surface and having a first concentration of a dopant of the first conductivity type. A trench with a sidewall and bottom extends at least partially through the semiconductor layer from the first main surface. A second column between the trench sidewall and the first column has a second concentration of a dopant of a second conductivity type and is formed in the semiconductor layer and extends from the first main surface. A trench oxide layer is in contact with at least the trench sidewall and the trench bottom. A trench nitride layer covers the trench oxide layer at least on the trench sidewall. A dielectric seal material seals the trench proximate the first main surface of the semiconductor layer such that the trench is air-tight.

Abstract: A sublimation generator including a sublimation tank configured to receive ice including at least carbon dioxide. The sublimation generator also includes a first heat exchanger in thermal communication with the sublimation tank. The first heat exchanger being configured to expel heat from a coolant into the sublimation tank to sublimate the carbon dioxide into a gaseous state. The sublimation generator also includes a gas turbine generator fluidly connected to the sublimation tank and configured to receive the carbon dioxide in the gaseous state.

Abstract: A high voltage superjunction MOSFET includes a semiconductor substrate and a semiconductor layer having columns of first and second conductivity. A buffer layer of the first conductivity is between the semiconductor substrate and semiconductor layer. A plug region of the second conductivity is formed at a semiconductor layer surface and extends to the columns. A source/drain region is formed at the semiconductor layer surface and is connected to the plug region. The source/drain region has a concentration of the first conductivity between about 1×1019 cm?3 and 1.5×1020 cm?3. A body region of the second conductivity is between the source/drain region and the first column and is connected to the plug region. A gate trench is formed in the semiconductor layer surface and extends toward the first column and has a trench gate electrode disposed therein. A dielectric layer separates the trench gate electrode from the first column.

Abstract: A system to perform multi-stage cleaning of material from a space suit worn by an astronaut in a deep space environment includes one or more discharge units installed external to an interior volume of a facility in the deep space environment. Each of the one or more discharge units releases one or more substances. The one or more substances includes water or air and the interior volume of the facility is defined by an interior hatch that is separated from an exterior hatch leading to the deep space environment by an airlock. One or more collection units installed external to the interior volume. Each collection unit traps released material that is released from a space suit based on the multi-stage cleaning to prevent the released material from entering the interior volume.

Abstract: An extraplanetary habitat system includes a habitat located on a site including a layer of regolith material and one or more heat-generating systems located in the habitat. A heat exchanger is operably connected to the habitat. The heat exchanger is located beneath the layer of regolith material and is configured to conduct the heat from the habitat into the layer of regolith material. A method of cooling one or more heat generating components of an extraplanetary habitat includes directing a flow of fluid from the habitat to a heat exchanger located beneath a layer of regolith material, exchanging thermal energy between the flow of fluid and the regolith material, thereby cooling the volume of fluid, and directing the flow of fluid from the heat exchanger to the habitat, thus cooling the habitat.

Abstract: A high voltage superjunction MOSFET includes a semiconductor substrate and a semiconductor layer having columns of first and second conductivity. A buffer layer of the first conductivity is between the semiconductor substrate and semiconductor layer. A plug region of the second conductivity is formed at a semiconductor layer surface and extends to the columns. A source/drain region is formed at the semiconductor layer surface and is connected to the plug region. The source/drain region has a concentration of the first conductivity between about 1×1019 cm?3 and 1.5×1020 cm?3. A body region of the second conductivity is between the source/drain region and the first column and is connected to the plug region. A gate trench is formed in the semiconductor layer surface and extends toward the first column and has a trench gate electrode disposed therein. A dielectric layer separates the trench gate electrode from the first column.

Abstract: A semiconductor device includes a semiconductor layer with opposing first and second main surfaces and a first column extending from the first main surface and having a first concentration of a dopant of the first conductivity type. A trench with a sidewall and bottom extends at least partially through the semiconductor layer from the first main surface. A second column between the trench sidewall and the first column has a second concentration of a dopant of a second conductivity type and is formed in the semiconductor layer and extends from the first main surface. A trench oxide layer is in contact with at least the trench sidewall and the trench bottom. A trench nitride layer covers the trench oxide layer at least on the trench sidewall. A dielectric seal material seals the trench proximate the first main surface of the semiconductor layer such that the trench is air-tight.

Abstract: A novel trailer securing and releasing mechanism for a boat is disclosed to facilitate the process when unloading and releasing a boat into the water as well as loading the boat back on the trailer via securing the boat's eye bolt, or ring. The invention device encompasses a spring- or hydraulically-activated mechanism normally attached to the trailer tongue. The boat loading mechanism operates by movement of a horizontal rod being forced in the direction toward the trailer resulting from contact by the boat ring. This contact and movement of the rod forward results in positioning the boat ring within an open claw-like device and, simultaneously, causes the open claw to slam shut wherein each claw arm lies with the boat ring and thereby affixing the boat to the trailer. As the rod arm is moved back within its housing by the forward motion of the boat the energy of said movement is captured and retained, either by a compression of a spring or of a fluid (gas or liquid) within a hydraulic mechanism.