Patents by Inventor Samuel E. Polanco

Samuel E. Polanco has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuits having stepped dielectric regions
    Patent number: 4676869
    Abstract: Deposited silicon dioxide may be used as a field oxide layer or for other dielectric purposes in integrated circuits. However, etching a pattern in the layer usually produces steep sidewalls that prevent good step coverage of subsequently deposited conductor layers. The present technique forms the dielectric in at least two layers having different densities. A sequence of anisotropic and isotropic etching results in stepped sidewalls, providing good linewidth control and good step coverage of subsequently deposited material.
    Type: Grant
    Filed: September 4, 1986
    Date of Patent: June 30, 1987
    Assignee: American Telephone and Telegraph Company AT&T Bell Laboratories
    Inventors: Kuo-hua Lee, Samuel E. Polanco
  • Integrated circuits having stepped dielectric regions
    Patent number: RE33622
    Abstract: Deposited silicon dioxide may be used as a field oxide layer or for other dielectric purposes in integrated circuits. However, etching a pattern in the layer usually produces steep sidewalls that prevent good step coverage of subsequently deposited conductor layers. The present technique forms the dielectric in at least two layers having different densities. A sequence of anisotropic and isotropic etching results in stepped sidewalls, providing good linewidth control and good step coverage of subsequently deposited material.
    Type: Grant
    Filed: June 23, 1989
    Date of Patent: June 25, 1991
    Assignee: AT&T Bell Laboratories
    Inventors: Kuo-hua Lee, Samuel E. Polanco