Abstract: A method for producing a heterojunction photovoltaic cell includes formation of at least one anti-reflection layer on which at least one metal track is formed. The method includes heat treatment to make the contact connection between the track and the anti-reflection layer. The heat treatment selectively applies a laser beam on the track to generate a heat input up to anti-reflection layer.

Abstract: A method for producing a heterojunction photovoltaic cell includes formation of at least one anti-glare layer on which at least one metal track is formed. The method includes heat treatment to make the contact connection between the track and the anti-glare layer. The heat treatment selectively applies a laser beam on the track to generate a heat input up to anti-glare layer.

Abstract: A method for producing a photovoltaic cell with interdigitated contacts in the rear face, comprising: providing a doped silicon substrate; forming, on the rear face of said substrate, a doped semiconductor layer with a first dopant species; forming, on said layer, a dopant layer comprising a second dopant species, of an electric type opposite to that of the first species; forming, in the doped layer, at least one doped region of a type opposite to that of the first species, by irradiation of at least one region of the dopant layer with a luminous flux of fluence greater than a threshold above which the dopants of the irradiated region of the dopant layer diffuse into the region underlying the doped layer in such a way as to exceed the concentration of the first dopant species; and forming, in the doped layer, at least one electrically insulating region, by selective irradiation of at least one region of the dopant layer with a luminous flux of which the fluence is in a range lower than said threshold, at whic

Abstract: A method for manufacturing a photovoltaic cell with a selective emitter, including the steps of: depositing an antireflection layer including n-type dopants on an n- or p-type silicon substrate, said deposition being, performed in the presence of a chemical compound that accelerates the diffusion of n-type dopant atoms in said substrate; overdoping at least one area of the substrate to form at least one n++ overdoped emitter by local diffusion of the n dopants of at least one area of the antireflection layer; depositing at least one n-type conductive material on the at least one n++ overdoped emitter; and at least one p-type conductive material on the surface of the substrate opposite to that including the antireflection layer; forming the n contacts and the p contacts simultaneously to the forming of an n+ emitter by an anneal capable of diffusing within the substrate n dopants from the antireflection layer.

Abstract: A method of manufacturing a photovoltaic cell including forming a semiconductor substrate comprising opposite first and second surfaces; forming, on the first surface of the substrate, a first semiconductor area doped by implantation of first dopant elements across the substrate thickness and by thermal activation of the first implanted dopant elements at a first activation temperature; forming, on the second surface of the substrate, a second semiconductor area doped by implantation of second dopant elements across the substrate thickness and by thermal activation of the second implanted dopant elements at a second activation temperature lower than the first activation temperature; at least the thermal activation of the first dopant elements is performed by laser irradiation, the irradiation parameters being selected so that the radiation is absorbed at most down to a depth of the first micrometer of the substrate.

Abstract: A method for manufacturing a photovoltaic cell with a selective emitter, including the steps of: depositing an antireflection layer including n-type dopants on an n- or p-type silicon substrate, said deposition being, performed in the presence of a chemical compound that accelerates the diffusion of n-type dopant atoms in said substrate; overdoping at least one area of the substrate to form at least one n++ overdoped emitter by local diffusion of the n dopants of at least one area of the antireflection layer; depositing at least one n-type conductive material on the at least one n++ overdoped emitter; and at least one p-type conductive material on the surface of the substrate opposite to that including the antireflection layer; forming the n contacts and the p contacts simultaneously to the forming of an n+ emitter by an anneal capable of diffusing within the substrate n dopants from the antireflection layer.