Abstract: Support structures are used in certain additive fabrication processes to permit fabrication of a greater range of object geometries. For additive fabrication processes with materials that are subsequently sintered into a final part, an interface layer is formed between the object and support in order to inhibit bonding between adjacent surfaces of the support structure and the object during sintering.

Abstract: Disclosed is a switch branch structure having an input terminal, an output terminal, and a series stack of an N-number of transistors formed in an active device layer within a first plane, wherein a first one of the N-number of transistors is coupled to the input terminal, and an nth one of the N-number of transistors is coupled to the output terminal, where n is a positive integer greater than one. A metal layer element has a planar body with a proximal end that is electrically coupled to the input terminal and distal end that is electrically open, wherein the planar body is within a second plane spaced from and in parallel with the first plane such that the planar body capacitively couples a radio frequency signal at the input terminal to between 10% and 90% of the N-number of transistors when the switch branch structure is in an off-state.

Abstract: Disclosed is a switch branch structure having an input terminal, an output terminal, and a series stack of an N-number of transistors formed in an active device layer within a first plane, wherein a first one of the N-number of transistors is coupled to the input terminal, and an nth one of the N-number of transistors is coupled to the output terminal, where n is a positive integer greater than one. A metal layer element has a planar body with a proximal end that is electrically coupled to the input terminal and distal end that is electrically open, wherein the planar body is within a second plane spaced from and in parallel with the first plane such that the planar body capacitively couples a radio frequency signal at the input terminal to between 10% and 90% of the N-number of transistors when the switch branch structure is in an off-state.

Abstract: Disclosed is a switch branch structure having an input terminal, an output terminal, and a series stack of an N-number of transistors formed in an active device layer within a first plane, wherein a first one of the N-number of transistors is coupled to the input terminal, and an nth one of the N-number of transistors is coupled to the output terminal, where n is a positive integer greater than one. A metal layer element has a planar body with a proximal end that is electrically coupled to the input terminal and distal end that is electrically open, wherein the planar body is within a second plane spaced from and in parallel with the first plane such that the planar body capacitively couples a radio frequency signal at the input terminal to between 10% and 90% of the N-number of transistors when the switch branch structure is in an off-state.

Abstract: Disclosed is a switch branch structure having an input terminal, an output terminal, and a series stack of an N-number of transistors formed in an active device layer within a first plane, wherein a first one of the N-number of transistors is coupled to the input terminal, and an nth one of the N-number of transistors is coupled to the output terminal, where n is a positive integer greater than one. A metal layer element has a planar body with a proximal end that is electrically coupled to the input terminal and distal end that is electrically open, wherein the planar body is within a second plane spaced from and in parallel with the first plane such that the planar body capacitively couples a radio frequency signal at the input terminal to between 10% and 90% of the N-number of transistors when the switch branch structure is in an off-state.

Abstract: A drive apparatus is provided which comprising a ducting piece coupled to a drive comprises an air vent. The base of the ducting piece is open to receive exhaust gases from the drive and the ducting piece then diverts these gases horizontally. A system may be provided comprises a plurality of such apparatuses, with the ducting pieces coupled to one another to pass the gases along a horizontal pathway.

Abstract: A semiconductor device driving unit to supply a drive signal to a gate of a semiconductor switching device, the semiconductor device driving unit comprising: a plurality of gate impedance circuits selectably connectable to the gate of the semiconductor switching device; and a selector to select one or more of the gate impedance circuits to connect to the semiconductor switching device. Also provided is a method of supplying a drive signal to a gate of a semiconductor switching device, the method comprising: selecting one or more of a plurality of gate impedance circuits to be connected to the gate of the semiconductor switching device based on one or more operating conditions and stored data relating to the one or more operating conditions; and connecting the selected one or more of the gate impedance circuits to the semiconductor switching device.

Abstract: A turn-on drive circuit for a power transistor comprising a first circuit comprising a resistor and capacitor in parallel and a second circuit comprising a resistor, the second circuit being in series in the drive path with the first circuit. A turn-off drive circuit for a power transistor comprising a first circuit comprising a first resistor and a second resistor in series in the drive path of the power resistor and a second circuit comprising a capacitor in parallel with one of the resistors of the first circuit.

Abstract: A semiconductor device driving unit to supply a drive signal to a gate of a semiconductor switching device, the semiconductor device driving unit comprising: a plurality of gate impedance circuits selectably connectable to the gate of the semiconductor switching device; and a selector to select one or more of the gate impedance circuits to connect to the semiconductor switching device. Also provided is a method of supplying a drive signal to a gate of a semiconductor switching device, the method comprising: selecting one or more of a plurality of gate impedance circuits to be connected to the gate of the semiconductor switching device based on one or more operating conditions and stored data relating to the one or more operating conditions; and connecting the selected one or more of the gate impedance circuits to the semiconductor switching device.