Patents by Inventor Samuel Graham, Jr.
Samuel Graham, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230352541Abstract: Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly bonded to one another by means of atomic layer bonding without the use of any interfacial bonding materials, where spontaneous polarization of the two layers produced by joining the two materials by direct wafer bonding produces a strong 2DEG or 2DHG at the interface. Embodiments include GaN/AlN and AlN/GaN heterostructures having an N- or Ga-polar GaN layer directly bonded to an N- or Al-polar Al layer. Other embodiments can incorporate an InN epitaxial layer or an alloy incorporating an N-polar, Al-polar, or Ga-polar material having In, Al, or Ga in the crystal lattice, e.g., (InxAl1-xN), InxGa1-xN, AlxGa1-xN, InxAlyGa1-x-yN, where (0<x?1, 0<y?1, 0<x+y?1).Type: ApplicationFiled: April 28, 2022Publication date: November 2, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Marko J. Tadjer, Michael A. Mastro, Mark Goorsky, Asif Khan, Samuel Graham, Jr.
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Publication number: 20230352571Abstract: Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly bonded to one another by means of atomic layer bonding without the use of any interfacial bonding materials, where spontaneous polarization of the two layers produced by joining the two materials by direct wafer bonding produces a strong 2DEG or 2DHG at the interface. Embodiments include GaN/AIN and AlN/GaN heterostructures having an N- or Ga-polar GaN layer directly bonded to an N- or Al-polar Al layer. Other embodiments can incorporate an InN epitaxial layer or an alloy incorporating an N-polar, Al-polar, or Ga-polar material having In, Al, or Ga in the crystal lattice, e.g., (InxAl1-xN), InxGa1-xN, AlxGa1-xN, InxAlyGa1-x-yN, where (0<x?1, 0<y?1, 0<x+y?1).Type: ApplicationFiled: April 28, 2022Publication date: November 2, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Marko J. Tadjer, Michael A. Mastro, Mark Goorsky, Asif Khan, Samuel Graham, JR.
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Patent number: 11634834Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.Type: GrantFiled: August 24, 2021Date of Patent: April 25, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Travis J. Anderson, Andrew D. Koehler, Samuel Graham, Jr., Mark Goorsky, Zhe Cheng, Luke Yates, Tingyu Bai, Yekan Wang
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Publication number: 20220404204Abstract: Disclosed herein are thermoreflectance enhancement coatings and methods of making and use thereof.Type: ApplicationFiled: April 15, 2022Publication date: December 22, 2022Inventors: Riley Hanus, Samuel Graham, Jr.
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Publication number: 20210381127Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.Type: ApplicationFiled: August 24, 2021Publication date: December 9, 2021Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Travis J. Anderson, Andrew D. Koehler, Samuel Graham, JR., Mark Goorsky, Zhe Cheng, Luke Yates, Tingyu Bai, Yekan Wang
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Patent number: 11131039Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.Type: GrantFiled: May 23, 2019Date of Patent: September 28, 2021Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Travis J. Anderson, Andrew D. Koehler, Samuel Graham, Jr., Mark Goorsky, Zhe Cheng, Luke Yates, Tingyu Bai, Yekan Wang
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Patent number: 8173525Abstract: Systems and methods of nanomaterial transfer are described. A method of nanomaterial transfer involving fabricating a template and synthesizing nanomaterials on the template. Subsequently, the nanomaterials are transferred to a substrate by pressing the template onto the substrate. In some embodiments, the step of transferring the nanomaterials involves pressing the template onto the substrate such that the nanomaterials are embedded below a surface layer of the substrate. In some embodiments, the temperature of the plurality of nanomaterials is raised to assist the transfer of the nanomaterials to the substrate.Type: GrantFiled: June 16, 2006Date of Patent: May 8, 2012Assignee: Georgia Tech Research CorporationInventors: Samuel Graham, Jr., William P. King, Ching-ping Wong
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Publication number: 20100132762Abstract: Improved environmental barrier coatings and improved organic semiconductor devices employing the improved environmental barrier coatings are disclosed herein. Methods of making and using the improved coatings and devices are also described. An improved environmental barrier coating generally includes a primary barrier layer, a secondary barrier layer disposed on the primary barrier layer, and a passivation layer disposed on the secondary barrier layer. The secondary barrier layer is formed using atomic layer deposition.Type: ApplicationFiled: December 1, 2009Publication date: June 3, 2010Applicant: Georgia Tech Research CorporationInventors: SAMUEL GRAHAM, JR., Bernard Kippelen, Namsu Kim, Benoit Domercq
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Publication number: 20090246507Abstract: Systems and methods for fabrication, delivery, and transfer of carbon nanotubes are provided. In accordance with some embodiments, carbon nanotubes can be grown and then transferred to a surface for carrying grown nanotubes. Grown nanotubes can be formed in a mat of nanotubes that are integrally held together on a film. Grown nanotube mats can be formed as a mat of freestanding carbon nanotubes bound to each other. A method to fabricate transferable carbon nanotubes can include providing a surface to carry carbon nanotubes, applying a removable adhesive on a surface, and locating carbon nanotubes on a surface having the removable adhesive located thereon. A device for holding carbon nanotubes can include a surface for carrying carbon nanotubes, at least one grouping of free standing carbon nanotubes, and a removable adhesive disposed generally between the surface and the at least one grouping of free standing carbon nanotubes. Other aspects, embodiments, and features are also claimed and described.Type: ApplicationFiled: January 15, 2009Publication date: October 1, 2009Applicant: Georgia Tech Research CorporationInventors: SAMUEL GRAHAM, JR., Robert Cross
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Publication number: 20080283269Abstract: Systems and methods of nanomaterial transfer are described. A method of nanomaterial transfer involving fabricating a template and synthesizing nanomaterials on the template. Subsequently, the nanomaterials are transferred to a substrate by pressing the template onto the substrate. In some embodiments, the step of transferring the nanomaterials involves pressing the template onto the substrate such that the nanomaterials are embedded below a surface layer of the substrate. In some embodiments, the temperature of the plurality of nanomaterials is raised to assist the transfer of the nanomaterials to the substrate.Type: ApplicationFiled: June 16, 2006Publication date: November 20, 2008Applicant: Georgia Tech Research CorporationInventors: Samuel Graham, JR., William P. King, Ching-ping Wong
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Patent number: 7147722Abstract: Activated gaseous species generated adjacent a carbon contaminated surface affords in-situ cleaning. A device for removing carbon contamination from a surface of the substrate includes (a) a housing defining a vacuum chamber in which the substrate is located; (b) a source of gaseous species; and (c) a source of electrons that are emitted to activate the gaseous species into activated gaseous species. The source of electrons preferably includes (i) a filament made of a material that generates thermionic electron emissions; (ii) a source of energy that is connected to the filament; and (iii) an electrode to which the emitted electrons are attracted. The device is particularly suited for photolithography systems with optic surfaces, e.g., mirrors, that are otherwise inaccessible unless the system is dismantled. A method of removing carbon contaminants from a substrate surface that is housed within a vacuum chamber is also disclosed.Type: GrantFiled: May 24, 2004Date of Patent: December 12, 2006Assignee: EUV LLCInventors: Leonard E. Klebanoff, Philip Grunow, Samuel Graham, Jr.
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Patent number: 6772776Abstract: Activated gaseous species generated adjacent a carbon contaminated surface affords in-situ cleaning. A device for removing carbon contamination from a surface of the substrate includes (a) a housing defining a vacuum chamber in which the substrate is located; (b) a source of gaseous species; and (c) a source of electrons that are emitted to activate the gaseous species into activated gaseous species. The source of electrons preferably includes (i) a filament made of a material that generates thermionic electron emissions; (ii) a source of energy that is connected to the filament; and (iii) an electrode to which the emitted electrons are attracted. The device is particularly suited for photolithography systems with optic surfaces, e.g., mirrors, that are otherwise inaccessible unless the system is dismantled.Type: GrantFiled: September 18, 2001Date of Patent: August 10, 2004Assignee: EUV LLCInventors: Leonard E. Klebanoff, Philip Grunow, Samuel Graham, Jr.