Abstract: The present invention provides a vapour deposition method for preparing an amorphous lithium borosilicate compound or doped lithium borosilicate compound, the method comprising: providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron and a source of silicon, and, optionally, a source of at least one dopant element; providing a substrate at a temperature of less than about 180° C.; delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element, wherein the rate of flow of said oxygen is at least about 8×10?8 m3/s; and co-depositing the component elements from the vapour sources onto the substrate wherein the component elements react on the substrate to form the amorphous compound.

Abstract: The present invention provides a vapour deposition method for preparing an amorphous lithium borosilicate or doped lithium borosilicate compound, the method comprising: providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron, and a source of silicon, and, optionally, a source of at least one dopant element; delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element; and co-depositing the component elements from the vapour sources onto a substrate wherein the component elements react on the substrate to form the amorphous compound; wherein the amorphous lithium borosilicate or doped lithium borosilicate ompound has a lithium content in the range 40-65 atomic %, based on the combined atomic percentages of lithium, boron and silicon.

Abstract: Provided is a composition comprising: (a) a principal phase that is provided by a layered mixed metal oxide having a rocksalt structure belonging to the R-3m space group; the layered mixed metal oxide comprising the following component elements: 45 to 55 atomic % lithium; 20 to 55 atomic % of one or more transition metals selected from the group consisting of chromium, manganese, iron, nickel, cobalt, and combinations thereof; and 0 to 25 atomic % of one or more additional dopant elements selected from the group consisting of: magnesium, calcium, strontium, titanium, zirconium, vanadium, copper, ruthenium, zinc, molybdenum, boron, aluminium, gallium, tin, lead, bismuth, lanthanum, cerium, gadolinium and europium; wherein said atomic % is expressed as a % of total atoms of said layered oxide, excluding oxygen; (b) a minor phase that is provided by a metal oxide that does not have the crystal structure of the layered mixed metal oxide, the minor phase comprising one or more of the transition metals contained in

Abstract: The present invention provides a vapour deposition method for preparing an amorphous lithium borosilicate compound or doped lithium borosilicate compound, the method comprising: providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron and a source of silicon, and, optionally, a source of at least one dopant element; providing a substrate at a temperature of less than about 180° C.; delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element, wherein the rate of flow of said oxygen is at least about 8×10?8 m3/s; and co-depositing the component elements from the vapour sources onto the substrate wherein the component elements react on the substrate to form the amorphous compound.

Abstract: In a vapor deposition method which can be used to deposit mixtures of materials in progressively varying amounts on a substrate (1) and which can be used for a variety of purposes, but is of especial value in combinatorial chemistry, the path of the vaporized material from the source (3) to the substrate (1) is partially interrupted by a mask (5), the positioning of the mask in a plane parallel to the plane defined by the substrate (1) being such that the material is deposited on the substrate (1) in a thickness which increases substantially continuously in a direction along the substrate (1).

Abstract: In a vapour deposition method which can be used to deposit mixtures of materials in progressively varying amounts on a substrate (1) and which can be used for a variety of purposes, but is of especial value in combinatorial chemistry, the path of the vaporised material from the source (3) to the substrate (1) is partially interrupted by a mask (5), the positioning of the mask in a plane parallel to the plane defined by the substrate (1) being such that the material is deposited on the substrate (1) in a thickness which increases substantially continuously in a direction along the substrate (1).

Abstract: A method of manufacturing a pellistor comprises providing a porous catalyst layer (11) on a heater by electrodepositing material from a mixture containing the catalyst and a structure-directing agent in an amount sufficient to form an homogenous lyotropic liquid crystalline phase in the mixture.