Patents by Inventor Samuel Marks

Samuel Marks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12074235
    Abstract: Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: August 27, 2024
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Paul Gregory Evans, Thomas Francis Kuech, Donald E. Savage, Yajin Chen, Samuel Marks
  • Publication number: 20210069999
    Abstract: Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.
    Type: Application
    Filed: September 9, 2020
    Publication date: March 11, 2021
    Inventors: Paul Gregory Evans, Thomas Francis Kuech, Donald E. Savage, Yajin Chen, Samuel Marks