Abstract: Performing critical-dimension localization microscopy includes: subjecting a first dimensional member and a second dimensional member of a reference artifact to critical-dimension metrology, the first and second dimensional members, in combination, including a critical dimension and each independently providing optical contrast; determining a primary length of the critical dimension to be traceable to International System of Units meter; imaging in a calibrant optical field, by optical microscopy, the first dimensional member and the second dimensional member, the calibrant optical field disposed in an ocular optical field; determining, from the optical microscopy of the first dimensional member and the second dimensional member, a secondary length and a secondary length uncertainty of the critical dimension subjected to the critical-dimension metrology; and calibrating the calibrant optical field and the secondary length, to the primary length to establish traceability of the secondary length to the Internat

Abstract: Performing critical-dimension localization microscopy includes: subjecting a first dimensional member and a second dimensional member of a reference artifact to critical-dimension metrology, the first and second dimensional members, in combination, including a critical dimension and each independently providing optical contrast; determining a primary length of the critical dimension to be traceable to International System of Units meter; imaging in a calibrant optical field, by optical microscopy, the first dimensional member and the second dimensional member, the calibrant optical field disposed in an ocular optical field; determining, from the optical microscopy of the first dimensional member and the second dimensional member, a secondary length and a secondary length uncertainty of the critical dimension subjected to the critical-dimension metrology; and calibrating the calibrant optical field and the secondary length, to the primary length to establish traceability of the secondary length to the Internat

Abstract: A process for measuring a size distribution of a plurality of nucleic acid molecules, the process comprising: labeling the nucleic acid molecules with a fluorescent dye comprising a plurality of fluorescent dye molecules to form labeled nucleic acid molecules, such that a number of fluorescent dyes molecules attached to each nucleic acid molecule is reliably proportional to the number of base pairs in the nucleic acid molecule, the fluorescent dye molecules having a first florescence spectrum; producing, by the labeled nucleic acid molecules, the first florescence spectrum in response to irradiating the labeled nucleic acid molecules at the first wavelength; and detecting the first florescence spectrum to measure the size distribution of the plurality of nucleic acid molecules.

Abstract: A process for measuring a size distribution of a plurality of nucleic acid molecules, the process comprising: labeling the nucleic acid molecules with a fluorescent dye comprising a plurality of fluorescent dye molecules to form labeled nucleic acid molecules, such that a number of fluorescent dyes molecules attached to each nucleic acid molecule is reliably proportional to the number of base pairs in the nucleic acid molecule, the fluorescent dye molecules having a first florescence spectrum; producing, by the labeled nucleic acid molecules, the first florescence spectrum in response to irradiating the labeled nucleic acid molecules at the first wavelength; and detecting the first florescence spectrum to measure the size distribution of the plurality of nucleic acid molecules.

Abstract: A nanofabrication process for use with a photoresist that is disposed on a substrate includes the steps of exposing the photoresist to a grayscale radiation pattern, developing the photoresist to remove a irradiated portions and form a patterned topography having a plurality of nanoscale critical dimensions, and selectively etching the photoresist and the substrate to transfer a corresponding topography having a plurality of nanoscale critical dimensions into the substrate.

Abstract: A nanofabrication process for use with a photoresist that is disposed on a substrate includes the steps of exposing the photoresist to a grayscale radiation pattern, developing the photoresist to remove a irradiated portions and form a patterned topography having a plurality of nanoscale critical dimensions, and selectively etching the photoresist and the substrate to transfer a corresponding topography having a plurality of nanoscale critical dimensions into the substrate.