Patents by Inventor Samuel Menard
Samuel Menard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220416053Abstract: A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.Type: ApplicationFiled: August 30, 2022Publication date: December 29, 2022Applicant: STMICROELECTRONICS (TOURS) SASInventor: Samuel MENARD
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Patent number: 11462624Abstract: A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.Type: GrantFiled: December 21, 2018Date of Patent: October 4, 2022Assignee: STMICROELECTRONICS (TOURS) SASInventor: Samuel Menard
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Patent number: 11362204Abstract: A thyristor is formed from a vertical stack of first, second, third, and fourth semiconductor regions of alternated conductivity types. The fourth semiconductor region is interrupted in a gate area of the thyristor. The fourth semiconductor region is further interrupted in a continuous corridor that extends longitudinally from the gate area towards an outer lateral edge of the fourth semiconductor region. A gate metal layer extends over the gate area of the thyristor. A cathode metal layer extends over the fourth semiconductor region but not over the continuous corridor.Type: GrantFiled: December 6, 2019Date of Patent: June 14, 2022Assignee: STMicroelectronics (Tours) SASInventors: Samuel Menard, Lionel Jaouen
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Publication number: 20200258818Abstract: A vertical power component includes a semiconductor substrate, a first electrode in contact with a lower surface of the substrate, and a second electrode in contact with an upper surface of the substrate. The vertical component is mounted to a metal connection plate via a metal spacer. The metal spacer includes a lower surface soldered to the metal connection plate and an upper surface soldered to the first electrode of the vertical power component. The metal spacer is made of a same metal as the metal connection plate. A surface are of the metal spacer mounted to the first electrode is smaller than a surface area of the first electrode.Type: ApplicationFiled: February 10, 2020Publication date: August 13, 2020Applicant: STMicroelectronics (Tours) SASInventors: Samuel MENARD, Laurent BARREAU
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Patent number: 10707337Abstract: A one-way switch has a gate referenced to a main back side electrode. An N-type substrate includes a P-type anode layer covering a back side and a surrounding P-type wall. First and second P-type wells are formed on the front side of the N-type substrate. An N-type cathode region is located in the first P-type well. An N-type gate region is located in the second P-type well. A gate metallization covers both the N-type gate region and a portion of the second P-type well. The second P-type well is separated from the P-type wall by the N-type substrate except at a location of a P-type strip that is formed in the N-type substrate and connects a portion on one side of the second P-type well to an upper portion of said P-type wall.Type: GrantFiled: August 1, 2018Date of Patent: July 7, 2020Assignee: STMicroelectronics (Tours) SASInventor: Samuel Menard
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Publication number: 20200203516Abstract: A thyristor is formed from a vertical stack of first, second, third, and fourth semiconductor regions of alternated conductivity types. The fourth semiconductor region is interrupted in a gate area of the thyristor. The fourth semiconductor region is further interrupted in a continuous corridor that extends longitudinally from the gate area towards an outer lateral edge of the fourth semiconductor region. A gate metal layer extends over the gate area of the thyristor. A cathode metal layer extends over the fourth semiconductor region but not over the continuous corridor.Type: ApplicationFiled: December 6, 2019Publication date: June 25, 2020Applicant: STMicroelectronics (Tours) SASInventors: Samuel MENARD, Lionel JAOUEN
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Patent number: 10453835Abstract: A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first portion resting on a first region of a first conductivity type formed in a layer of a second conductivity type. A second portion of the main metallization rests on a portion of the layer. A gate metallization on the upper surface side rests on a second region of the first conductivity type formed in the layer in the vicinity of the first region. A porous silicon bar formed in the layer at the upper surface side has a first end in contact with the gate metallization and a second end in contact with the main metallization.Type: GrantFiled: August 6, 2018Date of Patent: October 22, 2019Assignee: STMicroelectronics (Tours) SASInventor: Samuel Menard
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Publication number: 20190214476Abstract: A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.Type: ApplicationFiled: December 21, 2018Publication date: July 11, 2019Inventor: Samuel MENARD
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Patent number: 10211326Abstract: A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate. A passivation structure coats a peripheral region of the upper surface side of the substrate surrounding the well. This passivation structure includes, on top of and in contact with the peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material. The second region generates, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.Type: GrantFiled: November 29, 2016Date of Patent: February 19, 2019Assignee: STMicroelectronics (Tours) SASInventor: Samuel Menard
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Publication number: 20190043972Abstract: A one-way switch has a gate referenced to a main back side electrode. An N-type substrate includes a P-type anode layer covering a back side and a surrounding P-type wall. First and second P-type wells are formed on the front side of the N-type substrate. An N-type cathode region is located in the first P-type well. An N-type gate region is located in the second P-type well. A gate metallization covers both the N-type gate region and a portion of the second P-type well. The second P-type well is separated from the P-type wall by the N-type substrate except at a location of a P-type strip that is formed in the N-type substrate and connects a portion on one side of the second P-type well to an upper portion of said P-type wall.Type: ApplicationFiled: August 1, 2018Publication date: February 7, 2019Applicant: STMicroelectronics (Tours) SASInventor: Samuel MENARD
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Publication number: 20180350793Abstract: A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first portion resting on a first region of a first conductivity type formed in a layer of a second conductivity type. A second portion of the main metallization rests on a portion of the layer. A gate metallization on the upper surface side rests on a second region of the first conductivity type formed in the layer in the vicinity of the first region. A porous silicon bar formed in the layer at the upper surface side has a first end in contact with the gate metallization and a second end in contact with the main metallization.Type: ApplicationFiled: August 6, 2018Publication date: December 6, 2018Applicant: STMicroelectronics (Tours) SASInventor: Samuel Menard
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Patent number: 10069001Abstract: A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first portion resting on a first region of a first conductivity type formed in a layer of a second conductivity type. A second portion of the main metallization rests on a portion of the layer. A gate metallization on the upper surface side rests on a second region of the first conductivity type formed in the layer in the vicinity of the first region. A porous silicon bar formed in the layer at the upper surface side has a first end in contact with the gate metallization and a second end in contact with the main metallization.Type: GrantFiled: August 22, 2016Date of Patent: September 4, 2018Assignee: STMicroelectronics (Tours) SASInventor: Samuel Menard
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Patent number: 10068999Abstract: A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.Type: GrantFiled: April 29, 2016Date of Patent: September 4, 2018Assignees: STMICROELECTRONICS (TOURS) SAS, UNIVERSITE FRANCOIS RABELAISInventors: Samuel Menard, Gael Gautier
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Publication number: 20180108766Abstract: A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate. A passivation structure coats a peripheral region of the upper surface side of the substrate surrounding the well. This passivation structure includes, on top of and in contact with the peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material. The second region generates, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.Type: ApplicationFiled: December 7, 2017Publication date: April 19, 2018Applicant: STMicroelectronics (Tours) SASInventor: Samuel Menard
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Publication number: 20170287892Abstract: A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first portion resting on a first region of a first conductivity type formed in a layer of a second conductivity type. A second portion of the main metallization rests on a portion of the layer. A gate metallization on the upper surface side rests on a second region of the first conductivity type formed in the layer in the vicinity of the first region. A porous silicon bar formed in the layer at the upper surface side has a first end in contact with the gate metallization and a second end in contact with the main metallization.Type: ApplicationFiled: August 22, 2016Publication date: October 5, 2017Applicant: STMicroelectronics (Tours) SASInventor: Samuel Menard
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Publication number: 20170288044Abstract: A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate. A passivation structure coats a peripheral region of the upper surface side of the substrate surrounding the well. This passivation structure includes, on top of and in contact with the peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material. The second region generates, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.Type: ApplicationFiled: November 29, 2016Publication date: October 5, 2017Applicant: STMicroelectronics (Tours) SASInventor: Samuel Menard
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Patent number: 9780188Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well. The porous silicon ring is produced by forming a doped well in a first surface of a doped substrate, placing that first surface of the substrate into an electrolytic bath, and circulating a current between an opposite second surface of the substrate and the electrolytic bath.Type: GrantFiled: November 17, 2016Date of Patent: October 3, 2017Assignees: STMicroelectronics (Tours) SAS, Universite Francois RabelaisInventors: Samuel Menard, Gael Gautier
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Patent number: 9722061Abstract: A bidirectional switch is formed in a semiconductor substrate of a first conductivity type. The switch includes first and second thyristors connected in antiparallel extending vertically between front and rear surfaces of the substrate. A vertical peripheral wall of the second conductivity type connects the front surface to the rear surface and surrounds the thyristors. On the front surface, in a ring-shaped region of the substrate separating the vertical peripheral wall from the thyristors, a first region of the first conductivity type is provided having a doping level greater than the substrate and having the shape of a ring-shaped band portion partially surrounding the first thyristor and stopping at the level of the adjacent region between the first and second thyristors.Type: GrantFiled: June 5, 2015Date of Patent: August 1, 2017Assignee: STMicroelectronics (Tours) SASInventors: Samuel Menard, Dalaf Ali
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Patent number: 9680468Abstract: A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor. The gates of the first and second thyristors are coupled to a same control terminal of the switch by respective dipole circuits. At least one of the dipole circuits is formed by at least one diode or at least one resistor.Type: GrantFiled: December 3, 2015Date of Patent: June 13, 2017Assignee: STMicroelectronics (Tours) SASInventors: Yannick Hague, Samuel Menard
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Publication number: 20170069733Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well. The porous silicon ring is produced by forming a doped well in a first surface of a doped substrate, placing that first surface of the substrate into an electrolytic bath, and circulating a current between an opposite second surface of the substrate and the electrolytic bath.Type: ApplicationFiled: November 17, 2016Publication date: March 9, 2017Applicants: STMicroelectronics (Tours) SAS, Universite Francois RabelaisInventors: Samuel Menard, Gael Gautier