Patents by Inventor Samuel R. McKnight

Samuel R. McKnight has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7546670
    Abstract: A method to fabricate a high density, minimal pitch, thermally matched contactor assembly to maintain electrical contact with contact regions on fully processed semiconductors, preferably while still in wafer form, and throughout a range of temperatures. A guide plate and a contactor assembly for such use, comprising a substrate formed of a material having a coefficient of thermal expansion approximately equal to that of the device; and at least one hole in the guide plate for receiving an electrical contact (probe element) for contacting at least one respective region on said surface, said at least one hole being sized and shaped so as to accept said electrical contact, while allowing said electrical contact (probe element) to move with respect to said hole in said guide plate. The material can be one of silicon, borosilicate glass and cordierite.
    Type: Grant
    Filed: May 5, 2006
    Date of Patent: June 16, 2009
    Assignee: International Business Machines Corporation
    Inventors: Timothy J. Dalton, Anna Karecki, legal representative, Samuel R. McKnight, George F. Walker, Simon M. Karecki
  • Patent number: 7252514
    Abstract: A method for forming a space transformer (and a space transformer formed by the method) having a first plate and a second plate, the plates being separated by a frame, and electrical connectors for providing electrical connections between electrical contacts which are relatively closely spaced on the first plate and relatively more widely spaced on the second plate. The method comprises attaching first ends of wires to first electrically conductive regions on the first plate; forming insulating layers over the wires; forming electrically conductive coverings over the insulating layers; and connecting second ends of the wires to second electrically conductive regions on the second plate.
    Type: Grant
    Filed: September 2, 2004
    Date of Patent: August 7, 2007
    Assignee: International Business Machines Corporation
    Inventors: Samuel R. McKnight, George F. Walker
  • Patent number: 6960831
    Abstract: A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.
    Type: Grant
    Filed: September 25, 2003
    Date of Patent: November 1, 2005
    Assignee: International Business Machines Corporation
    Inventors: Lloyd G. Burrell, Kwong H. Wong, Adreanne A. Kelly, Samuel R. McKnight