Patents by Inventor Samuel Robert Cross

Samuel Robert Cross has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Positive electrode active material and electrochemical cell comprising the positive electrode active material
    Patent number: 11881583
    Abstract: A positive electrode active material includes a doped lithium nickel phosphate having an olivine structure comprising distorted NiO6 octahedra. The dopant is an anion; or a combination of at least two transition metals having different ionic radii; or an anion and a metal cation. The positive electrode active material can be used in a positive electrode for an electrochemical cell.
    Type: Grant
    Filed: February 15, 2022
    Date of Patent: January 23, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Valentina Lacivita, Yongwoo Shin, Samuel Robert Cross
  • POSITIVE ELECTRODE ACTIVE MATERIAL AND ELECTROCHEMICAL CELL COMPRISING THE POSITIVE ELECTRODE ACTIVE MATERIAL
    Publication number: 20230187634
    Abstract: A positive electrode active material includes a doped lithium nickel phosphate having an olivine structure comprising distorted NiO6 octahedra. The dopant is an anion; or a combination of at least two transition metals having different ionic radii; or an anion and a metal cation. The positive electrode active material can be used in a positive electrode for an electrochemical cell.
    Type: Application
    Filed: February 15, 2022
    Publication date: June 15, 2023
    Inventors: Valentina Lacivita, Yongwoo Shin, Samuel Robert Cross
  • ELECTRODE STRUCTURE FOR SECONDARY BATTERY, METHOD OF MANUFACTURING THE SAME, AND SECONDARY BATTERY COMPRISING THE SAME
    Publication number: 20230102903
    Abstract: An electrode for a secondary battery includes a current collector; and an active material structure on the current collector, the activate material structure including: at least one first high-density layer, and at least one second high-density layer, the at least one second high-density layer being further away from the current collector as compared to the at least one first high-density layer; and a low-density layer between the at least one first high-density layer and the at least one second high-density layer, wherein a thickness of the at least one second high-density layer is greater than a thickness of the at least one first high-density layer.
    Type: Application
    Filed: September 13, 2022
    Publication date: March 30, 2023
    Inventors: Jinsuck Heo, Samuel Robert Cross, Kyounghwan Kim, Joungwon Park, Jeongkuk Shon, Huisu Jeong