Abstract: A monolithically-integrated photovoltaic module is provided. The module includes an electrically insulating substrate, a lower stack of microcrystalline silicon layers above the substrate, a middle stack of amorphous silicon layers above the lower stack, an upper stack of amorphous silicon layers above the middle stack, and a light transmissive cover layer above the upper stack. An energy band gap of each of the lower, middle and upper stacks differs from one another such that a different spectrum of incident light is absorbed by each of the lower, middle and upper stacks.

Abstract: A monolithically-integrated photovoltaic module is provided. The module includes an insulating substrate and a lower electrode above the substrate. The method also includes a lower stack of microcrystalline silicon layers above the lower electrode, an upper stack of amorphous silicon layers above the lower stack, and an upper electrode above the upper stack. The upper and lower stacks of silicon layers have different energy band gaps. The module also includes a built-in bypass diode vertically extending in the upper and lower stacks of silicon layers from the lower electrode to the upper electrode. The built-in bypass diode includes portions of the lower and upper stacks that have a greater crystalline portion than a remainder of the lower and upper stacks.

Abstract: A method of manufacturing a photovoltaic module is provided. The method includes providing an electrically insulating substrate and a lower electrode, depositing a lower stack of silicon layers above the lower electrode, and depositing an upper stack of silicon layers above the lower stack. The lower and upper stacks include N-I-P junctions. The lower stack has an energy band gap of at least 1.60 eV while the upper stack has an energy band gap of at least 1.80 eV. The method also includes providing an upper electrode above the upper stack. The lower and upper stacks convert incident light into an electric potential between the upper and lower electrodes with the lower and upper stacks converting different portions of the light into the electric potential based on wavelengths of the light.