Patents by Inventor Samuel Saada

Samuel Saada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10014150
    Abstract: An x-ray generator tube comprises a vacuum chamber with a cathode and an anode, the cathode and anode placed in the vacuum chamber, the cathode emits an electron beam in the direction of the anode, the anode includes a target emitting x-rays when it is struck by the electron beam, and the x-rays propagate out of the vacuum chamber by passing through the wall of the chamber via a diamond-based transmission window. According to the invention, a diamond-based x-ray sensor is integrated into the diamond-based transmission window.
    Type: Grant
    Filed: October 23, 2014
    Date of Patent: July 3, 2018
    Assignees: THALES, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean-Paul Mazellier, Colin Delfaure, Pascal Ponard, Samuel Saada, Nicolas Tranchant
  • Publication number: 20160240343
    Abstract: An x-ray generator tube comprises a vacuum chamber with a cathode and an anode, the cathode and anode placed in the vacuum chamber, the cathode emits an electron beam in the direction of the anode, the anode includes a target emitting x-rays when it is struck by the electron beam, and the x-rays propagate out of the vacuum chamber by passing through the wall of the chamber via a diamond-based transmission window. According to the invention, a diamond-based x-ray sensor is integrated into the diamond-based transmission window.
    Type: Application
    Filed: October 23, 2014
    Publication date: August 18, 2016
    Inventors: Jean-Paul MAZELLIER, Colin DELFAURE, Pascal PONARD, Samuel SAADA, Nicolas TRANCHANT
  • Publication number: 20150376814
    Abstract: A process for producing moulded elements made of diamond of nanometric, submicrometric or micrometric sizes, the process comprising the following steps: a) forming beads of nanometric, submicrometric or micrometric sizes, each bead comprising a diamond nanoparticle embedded in an embedding material, by contacting diamond particles of nanometric sizes with an embedding material; b) introducing a bead into cavities of a sacrificial mould, the cavities forming a replica of the elements to be produced; c) removing the embedding material; d) forming diamond elements in the cavities containing a nanoparticle, by growing diamond from nanoparticles; e) releasing the diamond elements, by partially or totally removing the sacrificial mould.
    Type: Application
    Filed: January 27, 2014
    Publication date: December 31, 2015
    Applicant: Commissariat à L'énergie atomique et aux énergies alternatives,
    Inventors: Hugues Girard, Samuel Saada
  • Publication number: 20110156057
    Abstract: A semiconductor substrate including at least a layer based on doped diamond with a thickness greater than or equal to approximately 10 ?m, a layer based on at least one semiconductor or a stack of layers including the semiconductor-based layer, and a layer based on intrinsic diamond disposed against the layer based on doped diamond, between the layer based on doped diamond and the semiconductor-based layer.
    Type: Application
    Filed: July 28, 2009
    Publication date: June 30, 2011
    Applicant: COMM. A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALT.
    Inventors: Jean-Paul Mazellier, Francois Andrieu, Philippe Bergonzo, Samuel Saada