Patents by Inventor Samuel Sims
Samuel Sims has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11832533Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: GrantFiled: December 20, 2021Date of Patent: November 28, 2023Assignee: Lam Research CorporationInventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
-
Publication number: 20220115592Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: ApplicationFiled: December 20, 2021Publication date: April 14, 2022Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
-
Patent number: 11239420Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: GrantFiled: August 24, 2018Date of Patent: February 1, 2022Assignee: Lam Research CorporationInventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
-
Patent number: 11075127Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: GrantFiled: July 3, 2019Date of Patent: July 27, 2021Assignee: Lam Research CorporationInventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
-
Publication number: 20200066987Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: ApplicationFiled: August 24, 2018Publication date: February 27, 2020Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
-
Publication number: 20200066607Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: ApplicationFiled: July 3, 2019Publication date: February 27, 2020Inventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
-
Patent number: 10347547Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: GrantFiled: August 9, 2016Date of Patent: July 9, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
-
Publication number: 20180047645Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: ApplicationFiled: August 9, 2016Publication date: February 15, 2018Inventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
-
Patent number: 9865455Abstract: Provided are methods and apparatuses for depositing a nitride film using one or more plasma-enhanced atomic layer deposition cycles and one or more thermal atomic layer deposition cycles in a single reactor. The number of thermal atomic layer deposition cycles can be equal to or greater than the number of plasma-enhanced atomic layer deposition cycles. Incorporation of thermal atomic layer deposition cycles with plasma-enhanced atomic layer deposition cycles can allow for greater fine-tuning of properties of the nitride film. In some implementations, the nitride film is a silicon nitride film. The silicon nitride film can be fine-tuned to allow for a more silicon-rich film with a greater refractive index. In some implementations, the plasma-enhanced atomic layer deposition cycles and the thermal atomic layer deposition cycles can be maintained at the same wafer temperature.Type: GrantFiled: September 7, 2016Date of Patent: January 9, 2018Assignee: Lam Research CorporationInventors: James Samuel Sims, Kathryn Merced Kelchner
-
Publication number: 20070032289Abstract: The Bingo-opoly invention is directed to methods and processes for conducting a bingo-related prize distribution and marketing system whereby participation in and use of such is determined by results of play in a primary traditional bingo game and conditioned upon a player's ongoing presence in the primary game location and/or continued participation in ongoing primary games. The invention is further directed to addressing inadequacies in the prior art in meeting bingo market demand for novelty, the cultivation of player loyalty and to provide unique and improved methods of bingo game marketing, player incentives and prize distribution.Type: ApplicationFiled: August 3, 2005Publication date: February 8, 2007Inventors: Samuel Sims, Richard Slater
-
Publication number: 20060281518Abstract: The invention is directed to methods and processes for conducting a secondary competitive pull tab or other game of chance wherein entry and play in such game is determined by results of play in a primary traditional pull tab or other game of chance. The invention is further directed to addressing inadequacies in the prior art in meeting pull tab and game of chance market demand for novelty, the cultivation of player loyalty and to provide a unique and improved method of pull tab and game of chance marketing, player incentives and prize distribution.Type: ApplicationFiled: December 30, 2005Publication date: December 14, 2006Inventors: Samuel Sims, Richard Slater
-
Publication number: 20060281524Abstract: The invention is directed to methods and processes for conducting a secondary competitive bingo-related matrix type game wherein entry and play in such game is determined by results of play in a primary traditional bingo game. The invention is further directed to addressing inadequacies in the prior art in meeting bingo market demand for game novelty, the cultivation of player loyalty and to provide unique and improved methods of bingo game marketing, player incentives and prize distribution.Type: ApplicationFiled: June 2, 2005Publication date: December 14, 2006Inventors: Samuel Sims, Richard Slater